H10D 12/035
Etching a recess in the emitter region
Official title: {Etching a recess in the emitter region (having a recessed gate H10D12/038)}
H10D12/035 (Etching a recess in the emitter region) appears on 267 US grants and 328 published applications in this corpus.
Search patents in H10D- Granted patents
- 267
- Published applications
- 328
- Assignees
- 84
- Inventors
- 499
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 3 |
| 2003 | 5 | 1 |
| 2004 | 0 | 2 |
| 2005 | 3 | 2 |
| 2006 | 1 | 4 |
| 2007 | 1 | 2 |
| 2008 | 1 | 0 |
| 2009 | 0 | 6 |
| 2010 | 4 | 6 |
| 2011 | 5 | 4 |
| 2012 | 5 | 11 |
| 2013 | 6 | 10 |
| 2014 | 10 | 15 |
| 2015 | 22 | 38 |
| 2016 | 23 | 25 |
| 2017 | 29 | 26 |
| 2018 | 23 | 29 |
| 2019 | 20 | 20 |
| 2020 | 16 | 17 |
| 2021 | 18 | 16 |
| 2022 | 11 | 12 |
| 2023 | 12 | 15 |
| 2024 | 8 | 14 |
| 2025 | 12 | 27 |
| 2026 | 5 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and method of manufacturing the same19 May 2026US 12,635,214 B2Fuji Electric Co., Ltd.
- Trench sic power semiconductor device7 Apr 2026US 12,598,773 B2Hitachi Energy Ltd
- Input capacitance enhancement for ESD ruggedness in semiconductor devices20 Jan 2026US 12,532,490 B2Infineon Technologies AG
- Method of manufacturing a semiconductor device and semiconductor device6 Jan 2026US 12,520,552 B2Infineon Technologies Austria AG
- Semiconductor device and method of manufacturing the same24 Sep 2026US 2026/0293259 A1Renesas Electronics Corporation
- Power Semiconductor Device and Method of Producing a Power Semiconductor Device20 Aug 2026US 2026/0247661 A1Infineon Technologies AG
- Semiconductor device and method of manufacturing the same28 May 2026US 2026/0150315 A1Renesas Electronics Corporation
- Manufacturing method of semiconductor device14 May 2026US 2026/0136572 A1Fuji Electric Co., Ltd.
- Semiconductor device and manufacturing method thereof30 Apr 2026US 2026/0123014 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Self-aligned power MOSFET device with recessed gate and source168US 5,801,417 AAdvanced Power Technology, Inc. · 1998
- High density power device fabrication process154US 5,283,201 AAdvanced Power Technology, Inc. · 1994
- IGBT process to produce platinum lifetime control118US 5,262,336 AAdvanced Power Technology, Inc. · 1993
- High density power device fabrication process using undercut oxide sidewalls114US 5,648,283 AAdvanced Power Technology, Inc. · 1997
- Semiconductor structures with trench contacts99US 6,037,628 AIntersil Corporation · 2000