Semiconductor device and manufacturing method thereof

Abstract

Provided is a semiconductor device, comprising: a semiconductor substrate; an interlayer dielectric film provided on the semiconductor substrate, having contact holes provided thereon, wherein the contact holes include a contact hole with a stepped portion on a sidewall; and a contact portion provided in the contact hole, wherein the contact portion has a barrier layer provided on the sidewall and a bottom surface of the contact hole, wherein the barrier layer has: a first region in direct contact with the stepped portion; and a second region in direct contact with the sidewall of the contact hole in a region different from the first region, wherein when a film thickness of a thickest portion of the first region is T and a film thickness of a thinnest portion of the second region is t, 0.3T≤t≤0.95T is satisfied.

Dependencies are inferred from the claim text.