Trench sic power semiconductor device
AssigneeHitachi Energy Ltd
InventorsMarco Bellini, Lars Knoll
Life of this patent
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Abstract
A power semiconductor device comprises a drift layer of a first conductivity type, a source layer of the first conductivity type on the drift layer, with an insulated trench gate electrode which extends through the source layer into the drift layer, and an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping variation of at most 8%. The homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm. A method is provided for producing a power semiconductor device with an insulated trench gate electrode.
Claims18
A method for manufacturing a Silicon Carbide (SiC) power semiconductor device with an insulated trench gate electrode, comprising the steps of:
- providing a drift layer of a first conductivity type;
- forming a source layer of the first conductivity type on the drift layer;
- forming the insulated trench gate electrode which extends through the source layer into the drift layer;
- implanting ions of a second conductivity type, which is different than the first conductivity type into the drift layer to produce an implant layer of the second conductivity type with a homogeneous doping region having a doping variation of at most 8%, and
- partially removing the source layer such that a section of the drift layer is uncovered, wherein the homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm.
A power semiconductor device comprising:
- a drift layer of a first conductivity type;
- a source layer of the first conductivity type on the drift layer, wherein the source layer is partially removed prior or after an implantation step such that a section of the drift layer is uncovered;
- an insulated trench gate electrode which extends through the source layer into the drift layer;
- and
- an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping variation of at most 8%, which homogeneous doping region is arranged between the source layer and the drift layer and has a homogeneous doping region thickness of at least 150 nm.
Dependencies are inferred from the claim text.