Method of manufacturing a semiconductor device and semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsAlim Karmous, Olaf Storbeck
Life of this patent
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Abstract
A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method further includes forming a conductive material on the auxiliary layer. The conductive material incudes AlSiCu, AlSi or tungsten, and is electrically connected to the part of the semiconductor structure via the auxiliary layer.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor;
- forming an auxiliary layer directly on a part of the semiconductor, wherein silicon and nitrogen are main components of the auxiliary layer;
- and
- forming a conductive material directly on the auxiliary layer such that the conductive material is separated from the semiconductor by the auxiliary layer, wherein the conductive material comprises AlSiCu or AlSi and is electrically connected to the part of the semiconductor via the auxiliary layer,
- wherein forming the auxiliary layer comprises transforming a thin oxide layer covering the part of the semiconductor into silicon oxynitride or silicon nitride constituting part of the auxiliary layer.
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor;
- forming a groove in the semiconductor at a first surface of the semiconductor;
- forming an auxiliary layer that directly lines opposite sidewalls and a bottom side of the groove, wherein silicon and nitrogen are main components of the auxiliary layer;
- and
- forming a conductive material directly on the auxiliary layer such that the conductive material is separated from the semiconductor by the auxiliary layer, wherein the conductive material comprises AlSiCu or AlSi and is electrically connected to the semiconductor through the auxiliary layer such that an electric contact is provided to the semiconductor via a bottom side of the conductive material disposed along the bottom side of the groove and via part of a side surface of the conductive material disposed along the opposite sidewalls of the groove.
Dependencies are inferred from the claim text.