H10D 12/031
Of igbts
Official title: {of IGBTs}
H10D12/031 (Of igbts) appears on 4,487 US grants and 5,395 published applications in this corpus.
Search patents in H10D- Granted patents
- 4,487
- Published applications
- 5,395
- Assignees
- 556
- Inventors
- 3,997
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 13 | 0 |
| 1992 | 15 | 0 |
| 1993 | 16 | 0 |
| 1994 | 18 | 0 |
| 1995 | 19 | 0 |
| 1996 | 19 | 0 |
| 1997 | 20 | 0 |
| 1998 | 34 | 0 |
| 1999 | 49 | 0 |
| 2000 | 49 | 0 |
| 2001 | 59 | 26 |
| 2002 | 40 | 54 |
| 2003 | 51 | 60 |
| 2004 | 52 | 51 |
| 2005 | 47 | 73 |
| 2006 | 41 | 77 |
| 2007 | 47 | 90 |
| 2008 | 48 | 119 |
| 2009 | 58 | 113 |
| 2010 | 114 | 135 |
| 2011 | 113 | 173 |
| 2012 | 126 | 206 |
| 2013 | 175 | 249 |
| 2014 | 225 | 288 |
| 2015 | 267 | 348 |
| 2016 | 295 | 369 |
| 2017 | 344 | 353 |
| 2018 | 305 | 359 |
| 2019 | 349 | 352 |
| 2020 | 312 | 255 |
| 2021 | 225 | 252 |
| 2022 | 209 | 272 |
| 2023 | 168 | 305 |
| 2024 | 167 | 323 |
| 2025 | 213 | 304 |
| 2026 | 164 | 189 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Silicon carbide semiconductor device and manufacturing method therefor6 Oct 2026US 12,757,464 B2Hubei Jiufengshan Laboratory
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals29 Sep 2026US 12,751,026 B2Mitsubishi Electric Corporation
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Field effect transistor1 Oct 2026US 2026/0304861 A1Denso Corporation
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Semiconductor device and method for manufacturing24 Sep 2026US 2026/0293173 A1Kabushiki Kaisha Toshiba
- Method of manufacturing power semiconductor device including shielding region24 Sep 2026US 2026/0293230 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Enhanced mobility MOSFET device and method441US 5,683,934 AMotorola, Inc. · 1997
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Silicon carbide power MOSFET with floating field ring and floating field plate237US 5,233,215 ANorth Carolina State University at Raleigh · 1993