H10D 12/032
Of vertical igbts
Official title: {of vertical IGBTs}
H10D12/032 (Of vertical igbts) appears on 2,717 US grants and 3,284 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,717
- Published applications
- 3,284
- Assignees
- 337
- Inventors
- 2,680
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 6 | 0 |
| 1990 | 3 | 0 |
| 1991 | 10 | 0 |
| 1992 | 12 | 0 |
| 1993 | 12 | 0 |
| 1994 | 14 | 0 |
| 1995 | 10 | 0 |
| 1996 | 12 | 0 |
| 1997 | 7 | 0 |
| 1998 | 18 | 0 |
| 1999 | 26 | 0 |
| 2000 | 26 | 0 |
| 2001 | 32 | 18 |
| 2002 | 25 | 36 |
| 2003 | 36 | 40 |
| 2004 | 37 | 28 |
| 2005 | 31 | 44 |
| 2006 | 22 | 45 |
| 2007 | 23 | 41 |
| 2008 | 28 | 51 |
| 2009 | 23 | 55 |
| 2010 | 47 | 70 |
| 2011 | 60 | 88 |
| 2012 | 72 | 106 |
| 2013 | 91 | 133 |
| 2014 | 119 | 195 |
| 2015 | 162 | 224 |
| 2016 | 188 | 245 |
| 2017 | 242 | 232 |
| 2018 | 192 | 228 |
| 2019 | 222 | 230 |
| 2020 | 200 | 170 |
| 2021 | 148 | 163 |
| 2022 | 130 | 166 |
| 2023 | 111 | 169 |
| 2024 | 101 | 185 |
| 2025 | 113 | 191 |
| 2026 | 100 | 131 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals29 Sep 2026US 12,751,026 B2Mitsubishi Electric Corporation
- Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods29 Sep 2026US 12,751,055 B2Nexperia B. V.
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Semiconductor device and method for manufacturing24 Sep 2026US 2026/0293173 A1Kabushiki Kaisha Toshiba
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device24 Sep 2026US 2026/0293253 A1Sumitomo Electric Industries, Ltd.
- Semiconductor device and method of manufacturing the same24 Sep 2026US 2026/0293259 A1Renesas Electronics Corporation
- Semiconductor device24 Sep 2026US 2026/0293264 A1Denso Corporation
Most cited
By later US patents
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- High performance high voltage vertical transistor and method of fabrication221US 5,326,711 ATexas Instruments Incorporated · 1994
- Power metal-oxide-semiconductor field effect transistor172US 5,168,331 ASiliconix Incorporated · 1992
- Self-aligned power MOSFET device with recessed gate and source168US 5,801,417 AAdvanced Power Technology, Inc. · 1998