H10D 1/712
Being rough surfaces
Official title: {being rough surfaces, e.g. using hemispherical grains}
H10D1/712 (Being rough surfaces) appears on 1,100 US grants and 630 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,100
- Published applications
- 630
- Assignees
- 145
- Inventors
- 1,196
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 3 | 0 |
| 1992 | 6 | 0 |
| 1993 | 10 | 0 |
| 1994 | 12 | 0 |
| 1995 | 15 | 0 |
| 1996 | 7 | 0 |
| 1997 | 26 | 0 |
| 1998 | 45 | 0 |
| 1999 | 72 | 0 |
| 2000 | 118 | 0 |
| 2001 | 172 | 60 |
| 2002 | 116 | 108 |
| 2003 | 100 | 106 |
| 2004 | 86 | 70 |
| 2005 | 70 | 68 |
| 2006 | 44 | 47 |
| 2007 | 45 | 37 |
| 2008 | 34 | 23 |
| 2009 | 21 | 12 |
| 2010 | 19 | 6 |
| 2011 | 12 | 7 |
| 2012 | 4 | 5 |
| 2013 | 6 | 4 |
| 2014 | 4 | 4 |
| 2015 | 4 | 2 |
| 2016 | 1 | 0 |
| 2017 | 1 | 3 |
| 2018 | 3 | 7 |
| 2019 | 1 | 1 |
| 2020 | 4 | 5 |
| 2021 | 3 | 7 |
| 2022 | 9 | 12 |
| 2023 | 6 | 21 |
| 2024 | 7 | 5 |
| 2025 | 9 | 6 |
| 2026 | 5 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Thin film capacitor using metal foil and electronic circuit substrate having the same10 Feb 2026US 12,548,716 B2TDK Corporation
- Semiconductor device including dielectric layer and method of forming the same27 Jan 2026US 12,538,499 B2Samsung Electronics Co., Ltd.
- Semiconductor device structure with electrode layer1 Oct 2026US 2026/0304804 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device30 Apr 2026US 2026/0122932 A1Samsung Electronics Co., Ltd.
- Reservoir capacitor26 Mar 2026US 2026/0089936 A1SK hynix Inc.
- Capacitor5 Feb 2026US 2026/0040593 A1Panasonic Intellectual Property Management Co., Ltd.
- Nanotextured capacitors and methods of forming the same18 Dec 2025US 2025/0386527 A1Adeia Semiconductor Bonding Technologies Inc.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method to reduce bit line capacitance in cub drams579US 6,472,266 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2002
- Method of manufacturing charge storage device553US 7,405,166 B2Industrial Technology Research Institute · 2008
- Uniform dielectric film deposition on textured surfaces542US 5,801,104 AMicron Technology, Inc. · 1998
- Conformal thin films over textured capacitor electrodes542US 6,780,704 B1ASM International N.V. · 2004