US 2026/0089936 A1 · RESERVOIR CAPACITOR

Abstract

Embodiments of the present invention provides a semiconductor device including a reservoir capacitor capable of increasing the surface area of the capacitor by disposing a first electrode having a pillar shape between a substrate and a second electrode and a method for fabricating the same. According to an embodiment of the present invention, the reservoir capacitor comprises: a substrate; a first electrode having a pillar shape and disposed over the substrate; a first dielectric layer disposed between the substrate and the first electrode; a second electrode disposed over the substrate and the first electrode and covering a side surface and a top surface of the first electrode; a second dielectric layer disposed between the first electrode and the second electrode; and a third dielectric layer disposed between the substrate and the second electrode.

Claims12

Dependent claims

A semiconductor device comprising:

a substrate including a cell region and a peripheral circuit region;
a buried gate structure in substrate of the cell region;
a bit line structure including a bit line contact plug over the substrate of the cell region;
a first electrode having a pillar shape and disposed over the substrate of the peripheral circuit region;
a second electrode disposed over the substrate and the first electrode in the peripheral circuit region and covering a side surface and a top surface of the first electrode;
a second dielectric layer disposed between the first electrode and the second electrode;
and
a third dielectric layer disposed between the substrate and the second electrode,
wherein the bit line contact plug and the first electrode are located at the same level.

6 more elements

Dependencies are inferred from the claim text.

Reservoir capacitor

Life of this patent

Reservoir capacitor

Life of this patent

Abstract

Claims12