H10B 99/14
Comprising memory cells that only have passive resistors or passive capacitors
Official title: {comprising memory cells that only have passive resistors or passive capacitors}
H10B99/14 (Comprising memory cells that only have passive resistors or passive capacitors) appears on 29 US grants and 40 published applications in this corpus.
Search patents in H10B- Granted patents
- 29
- Published applications
- 40
- Assignees
- 25
- Inventors
- 64
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 0 |
| 2006 | 0 | 2 |
| 2007 | 4 | 8 |
| 2008 | 3 | 2 |
| 2009 | 1 | 2 |
| 2010 | 1 | 3 |
| 2011 | 2 | 1 |
| 2012 | 2 | 3 |
| 2013 | 1 | 0 |
| 2014 | 4 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 1 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 2 |
| 2024 | 0 | 2 |
| 2025 | 0 | 4 |
| 2026 | 2 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D semiconductor devices and structures with functional units and pillars21 Apr 2026US 12,610,563 B2Monolithic 3D Inc.
- Multiple state programmable memory17 Feb 2026US 12,557,302 B2Texas Instruments Incorporated
- Integrated ultralong time constant time measurement device and fabrication process8 Aug 2023US 11,721,646 B2STMicroelectronics (Rousset) SAS
- Integrated ultralong time constant time measurement device and fabrication process2 Mar 2021US 10,937,746 B2STMicroelectronics (Rousset) SAS
- Switching element, semiconductor device, and semiconductor device manufacturing method24 Jan 2017US 9,553,084 B2Mitsubishi Electric Corporation
- Memory circuit and method of forming the same27 Aug 2026US 2026/0253623 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3d semiconductor devices and structures with functional units and vertical connectivity structures6 Aug 2026US 2026/0231441 A1Monolithic 3D Inc.
- Light sensing and memory integrated electronic device generating electrical spike12 Feb 2026US 2026/0047108 A1National Cheng Kung University
- 3d semiconductor devices and structures with functional units and pillars5 Feb 2026US 2026/0040586 A1Monolithic 3D Inc.
- Nanosheet 1t-4r mask-programmed multi-level read-only memory5 Feb 2026US 2026/0040637 A1International Business Machines Corporation
Most cited
By later US patents
- Planar capacitor memory cell and its applications311US 7,209,384 B12007
- Universal logic gate utilizing nanotechnology25US 7,420,396 B2KnowmTech, LLC · 2008
- Capacitor memory and methods for reading, writing, and fabricating capacitor memories21US 4,242,736 AMassachusetts Institute of Technology · 1980
- Reading capacitor memories with a variable voltage ramp20US 4,127,900 AMassachusetts Institute of Technology · 1978
- Vertical capacitor memory cell and its applications20US 7,196,926 B12007