Switching element, semiconductor device, and semiconductor device manufacturing method
AssigneeMitsubishi Electric Corporation
InventorsShigeru Hasegawa, Kazuhiro Morishita, Takeshi Kitani
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Abstract
According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.
Claims14
A switching element comprising:
- a substrate;
- a first gate pad formed on the substrate;
- a second gate pad formed on the substrate;
- a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other;
- and
- a cell region formed on the substrate and connected to the first gate pad,
- wherein a wire can be fixed to the first gate pad and the second gate pad.
A semiconductor device comprising:
- a plurality of switching elements each including a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad;
- and
- a plurality of wires respectively connected to the first gate pads or the second gate pads of the plurality of switching elements, each of the plurality of wires being capable of supplying a control signal,
- wherein a wire can be fixed to the first gate pad and the second gate pad.
A method of manufacturing a semiconductor device, comprising:
- a step of manufacturing a switching element including a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad;
- a step of measuring the resistance value of the first resistor portion by setting probes to the first gate pad and the second gate pad;
- and
- a step of mounting the switching element in a module if the resistance value meets a standard, wherein
- a wire can be fixed to the first gate pad and the second gate pad.
A method of manufacturing a semiconductor device, comprising:
- a step of manufacturing a plurality of switching elements each including a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad;
- a step of measuring the resistance value of the first resistor portion with respect to each of the plurality of switching elements by setting probes to the first gate pad and the second gate pad;
- and
- a step of selecting one of the plurality of switching elements having the resistance value within a desired range and mounting the selected switching element in one semiconductor device, wherein
- a wire can be fixed to the first gate pad and the second gate pad.
Dependencies are inferred from the claim text.