Light sensing and memory integrated electronic device generating electrical spike

Abstract

A light sensing and memory integrated electronic device includes a thin film transistor element and a memory element. The thin film transistor element includes a channel layer, a source layer and a drain layer. The channel layer is made of a transparent oxide. The memory element is on the source layer. The memory element includes a lower metal layer, a dielectric layer, a matching metal layer, and an upper metal layer stacked in sequence from bottom to top, where the lower metal layer is connected to the source layer. The light sensing and memory integrated electronic device provides a single device to perform light sensing, memorizing, and generating a spike-form signal required by a neural network. It can simplify a circuit and effectively reduce the photoelectric signal conversion time, and it can also make it more lightweight and improve space utilization efficiency, and achieve higher computing power.

Dependencies are inferred from the claim text.