H01S 2301/17
Semiconductor lasers comprising special layers
H01S2301/17 (Semiconductor lasers comprising special layers) appears on 1,513 US grants and 1,889 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,513
- Published applications
- 1,889
- Assignees
- 409
- Inventors
- 2,668
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 5 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 22 | 0 |
| 1999 | 15 | 0 |
| 2000 | 25 | 0 |
| 2001 | 22 | 8 |
| 2002 | 20 | 42 |
| 2003 | 34 | 77 |
| 2004 | 48 | 79 |
| 2005 | 44 | 91 |
| 2006 | 60 | 80 |
| 2007 | 47 | 65 |
| 2008 | 57 | 52 |
| 2009 | 48 | 59 |
| 2010 | 52 | 56 |
| 2011 | 53 | 58 |
| 2012 | 41 | 56 |
| 2013 | 53 | 61 |
| 2014 | 59 | 44 |
| 2015 | 61 | 63 |
| 2016 | 63 | 49 |
| 2017 | 50 | 73 |
| 2018 | 65 | 75 |
| 2019 | 77 | 77 |
| 2020 | 75 | 112 |
| 2021 | 64 | 122 |
| 2022 | 60 | 104 |
| 2023 | 70 | 123 |
| 2024 | 72 | 109 |
| 2025 | 69 | 83 |
| 2026 | 49 | 71 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Nitride semiconductor laser element25 Aug 2026US 12,719,233 B2Nichia Corporation
- Light emitting device25 Aug 2026US 12,719,236 B2Sony Semiconductor Solutions Corporation
- Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser element25 Aug 2026US 12,719,240 B2Hamamatsu Photonics K.K.
- Surface-emitting laser device and distance measurement device having same18 Aug 2026US 12,710,536 B2LG Innotek Co., Ltd.
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Surface-emitting element20 Aug 2026US 2026/0246234 A1Sony Semiconductor Solutions Corporation
- A vcsel with self-aligned microlens to improve beam divergence13 Aug 2026US 2026/0237971 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor light-emitting and light-receiving devices282US 6,172,382 B2Nichia Chemical Industries, Ltd. · 2001
- Semiconductor substrate, semiconductor device and method of manufacturing the same275US 6,069,394 AMatsushita Electronics Corporation · 2000
- Self-aligned multi-dielectric-layer lift off process for laser diode stripes231US 8,143,148 B1Soraa, Inc. · 2012
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993