H01S 2301/176
Specific passivation layers on surfaces other than the emission facet
H01S2301/176 (Specific passivation layers on surfaces other than the emission facet) appears on 1,044 US grants and 1,386 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,044
- Published applications
- 1,386
- Assignees
- 315
- Inventors
- 1,989
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 4 | 0 |
| 1998 | 13 | 0 |
| 1999 | 10 | 0 |
| 2000 | 12 | 0 |
| 2001 | 7 | 4 |
| 2002 | 14 | 29 |
| 2003 | 25 | 25 |
| 2004 | 21 | 47 |
| 2005 | 23 | 44 |
| 2006 | 29 | 59 |
| 2007 | 29 | 42 |
| 2008 | 36 | 31 |
| 2009 | 29 | 31 |
| 2010 | 26 | 34 |
| 2011 | 35 | 31 |
| 2012 | 21 | 40 |
| 2013 | 32 | 44 |
| 2014 | 45 | 34 |
| 2015 | 42 | 50 |
| 2016 | 47 | 38 |
| 2017 | 36 | 58 |
| 2018 | 51 | 63 |
| 2019 | 57 | 61 |
| 2020 | 63 | 98 |
| 2021 | 51 | 98 |
| 2022 | 48 | 83 |
| 2023 | 49 | 111 |
| 2024 | 65 | 93 |
| 2025 | 58 | 77 |
| 2026 | 43 | 61 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Nitride semiconductor laser element25 Aug 2026US 12,719,233 B2Nichia Corporation
- Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser element25 Aug 2026US 12,719,240 B2Hamamatsu Photonics K.K.
- Surface-emitting laser device and distance measurement device having same18 Aug 2026US 12,710,536 B2LG Innotek Co., Ltd.
- Surface emitting laser device, electronic device, and manufacturing method for surface emitting laser device11 Aug 2026US 12,706,436 B2Sony Semiconductor Solutions Corporation
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Optoelectronic semiconductor component20 Aug 2026US 2026/0246233 A1ams-OSRAM International GmbH
- Surface-emitting element20 Aug 2026US 2026/0246234 A1Sony Semiconductor Solutions Corporation
- A vcsel with self-aligned microlens to improve beam divergence13 Aug 2026US 2026/0237971 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nitride-based semiconductor light-emitting element and manufacturing method thereof13 Aug 2026US 2026/0239778 A1Nuvoton Technology Corporation Japan
Most cited
By later US patents
- Self-aligned multi-dielectric-layer lift off process for laser diode stripes231US 8,143,148 B1Soraa, Inc. · 2012
- Process for passivating semiconductor laser structures with severe steps in surface topography156US 5,851,849 ALucent Technologies Inc. · 1998
- Multi-wavelength VCSEL array to reduce speckle133US 8,743,923 B2FLIR Systems, Inc. · 2014
- Light emitting devices with layered III-V semiconductor structures124US 6,207,973 B1Ricoh Company, Ltd. · 2001
- Laser diode assembly with tunnel junctions and providing multiple beams111US 5,212,706 AUniversity of Connecticut · 1993