Nitride semiconductor laser element

A nitride semiconductor laser element comprising:

• a nitride semiconductor stack body including
• a first nitride semiconductor layer of a first conductivity type,
• a second nitride semiconductor layer of a second conductivity type different from the first conductivity type, and
• an active layer disposed between the first nitride semiconductor layer and the second nitride semiconductor layer,
• the nitride semiconductor stack body defining
• first end face intersecting a face of the active layer, and
• second end face intersecting the face of the active layer;
• a first film disposed on the first end face of the nitride semiconductor stack body with a distance between the first film and the first end face of the nitride semiconductor stack body being 3 nm or smaller, and the first film being a crystalline film containing oxygen and aluminum and/or gallium;
• a third film containing aluminum and oxygen;
• and
• a second film that is a nitride crystalline film disposed between the first film and the third film, the second film being directly in contact with the third film.