H01S 2301/173
The laser chip comprising special buffer layers
Official title: The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
H01S2301/173 (The laser chip comprising special buffer layers) appears on 476 US grants and 518 published applications in this corpus.
Search patents in H01S- Granted patents
- 476
- Published applications
- 518
- Assignees
- 182
- Inventors
- 938
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 10 | 0 |
| 1999 | 5 | 0 |
| 2000 | 13 | 0 |
| 2001 | 15 | 4 |
| 2002 | 6 | 15 |
| 2003 | 10 | 55 |
| 2004 | 29 | 35 |
| 2005 | 24 | 53 |
| 2006 | 36 | 25 |
| 2007 | 22 | 27 |
| 2008 | 24 | 23 |
| 2009 | 20 | 29 |
| 2010 | 28 | 24 |
| 2011 | 19 | 29 |
| 2012 | 20 | 16 |
| 2013 | 21 | 16 |
| 2014 | 16 | 10 |
| 2015 | 16 | 9 |
| 2016 | 13 | 10 |
| 2017 | 14 | 14 |
| 2018 | 13 | 10 |
| 2019 | 17 | 14 |
| 2020 | 11 | 17 |
| 2021 | 12 | 15 |
| 2022 | 12 | 22 |
| 2023 | 12 | 17 |
| 2024 | 10 | 13 |
| 2025 | 13 | 6 |
| 2026 | 4 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
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- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
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- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor light-emitting and light-receiving devices282US 6,172,382 B2Nichia Chemical Industries, Ltd. · 2001
- Semiconductor substrate, semiconductor device and method of manufacturing the same275US 6,069,394 AMatsushita Electronics Corporation · 2000
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993
- Nitride-compound semiconductor device176US 6,316,785 B1Kabushiki Kaisha Toshiba · 2001