H01J 2237/338
Changing chemical properties of treated surfaces
H01J2237/338 (Changing chemical properties of treated surfaces) appears on 108 US grants and 134 published applications in this corpus.
Search patents in H01J- Granted patents
- 108
- Published applications
- 134
- Assignees
- 84
- Inventors
- 411
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 4 |
| 2002 | 2 | 4 |
| 2003 | 4 | 1 |
| 2004 | 1 | 7 |
| 2005 | 2 | 2 |
| 2006 | 1 | 4 |
| 2007 | 6 | 4 |
| 2008 | 0 | 2 |
| 2009 | 4 | 3 |
| 2010 | 1 | 0 |
| 2011 | 1 | 2 |
| 2012 | 0 | 4 |
| 2013 | 1 | 2 |
| 2014 | 0 | 2 |
| 2015 | 3 | 5 |
| 2016 | 2 | 3 |
| 2017 | 2 | 0 |
| 2018 | 1 | 3 |
| 2019 | 5 | 3 |
| 2020 | 3 | 8 |
| 2021 | 4 | 6 |
| 2022 | 4 | 12 |
| 2023 | 4 | 12 |
| 2024 | 9 | 13 |
| 2025 | 8 | 16 |
| 2026 | 9 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Splitter circuit for wafer processing system29 Sep 2026US 12,749,655 B2APPLIED Materials.Inc.
- Seal structure, substrate processing apparatus, substrate processing method and method of manufacturing semiconductor device15 Sep 2026US 12,738,461 B2Kokusai Electric Corporation
- Method for etching atomic layer1 Sep 2026US 12,725,762 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Treatment of tungsten surface for tungsten gap-fill7 Jul 2026US 12,677,648 B2APPLIED Materials.Inc.
- Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus16 Jun 2026US 12,660,524 B2Kokusai Electric Corporation
- Plasma pretreatment for selective adsorption of aminosilane inhibitor24 Sep 2026US 2026/0293545 A1Lam Research Corporation
- Silicon insulation film forming method10 Sep 2026US 2026/0271638 A1Jusung Engineering Co., Ltd.
- Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium16 Jul 2026US 2026/0204526 A1Kokusai Electric Corporation
- Plasma processing method9 Jul 2026US 2026/0196449 A1Hitachi High-Tech Corporation
- Coatings7 May 2026US 2026/0125574 A1P2i Ltd.
Most cited
By later US patents
- Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method70US 6,265,327 B1Japan Science and Technology Corporation · 2001
- Apparatus and method for enhanced chemical processing in high pressure and atmospheric plasmas produced by high frequency electromagnetic waves68US 4,883,570 AResearch-Cottrell, Inc. · 1989
- Apparatus for exposing a substrate to plasma radicals62US 6,450,116 B1APPLIED Materials.Inc. · 2002
- Plasma reactor with heated source of a polymer-hardening precursor material57US 6,024,826 AAPPLIED Materials.Inc. · 2000
- Plasma enhanced thermal treatment apparatus52US 4,870,245 AMotorola, Inc. · 1989