Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus

A method of processing a substrate, comprising:

• (a) generating an oxygen-active species by plasma-exciting an oxygen-containing gas;
• (b) generating a hydrogen-active species by plasma-exciting a hydrogen-containing gas;
• and
• (c) supplying the oxygen-active species and the hydrogen-active species to the substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate,
• wherein a ratio of the hydrogen-active species to a sum of the oxygen-active species and the hydrogen-active species supplied to the substrate is adjusted to 5% or more and 20% or less such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (c) becomes a predetermined thickness ratio in a range of 67% or more and 90% or less, and
• wherein the ratio of hydrogen-active species to the sum of the oxygen-active species and the hydrogen-active species is adjusted such that the ratio of the hydrogen-active species to the sum of the oxygen-active species and the hydrogen-active species increases as the predetermined thickness ratio decreases.

A method of manufacturing a semiconductor device, comprising:

• (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen;
• and
• (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate,
• wherein a ratio of a number of hydrogen atoms to a total number of oxygen atoms and hydrogen atoms contained in the process gas is adjusted to 5% or more and 20% or less such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio in a range of 67% or more and 90% or less, and
• wherein the ratio of the number of hydrogen atoms to the total number of oxygen atoms and hydrogen atoms is adjusted such that the ratio of the number of hydrogen atoms to the total number of oxygen atoms and hydrogen atoms increases as the predetermined thickness ratio decreases.