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AssigneeKokusai Electric Corporation
InventorsKoichiro HARADA, Katsuhiko YAMAMOTO, Masaki MUROBAYASHI, VAN CHIEU NGUYEN
Estimating the term…
A technique that includes : a process chamber in which a substrate is processed with a gas; a plasma generator configured to convert the gas into a plasma state; a supply pipe installed at an upstream side of the process chamber; an exhaust pipe installed at a downstream side of the process chamber; a valve installed at a downstream side of the exhaust pipe; and an attenuator configured to attenuate an energy of the gas in the plasma state, the attenuator being installed at the exhaust pipe at a position closer to the valve than the process chamber, or installed at an upstream side of a connection between the supply pipe and the process chamber.
A substrate processing apparatus comprising:a process chamber in which a substrate is processed with a gas;a plasma generator configured to convert the gas into a plasma state;a supply pipe installed at an upstream side of the process chamber;an exhaust pipe installed at a downstream side of the process chamber;a valve installed at a downstream side of the exhaust pipe;
A method of processing a substrate by using a substrate processing apparatus, which includes a process chamber in which the substrate is processed with a gas, a plasma generator configured to convert the gas into a plasma state, a supply pipe installed at an upstream side of the process chamber, an exhaust pipe installed at a downstream side of the process chamber, a valve installed at a downstream side of the exhaust pipe, and an attenuator configured to attenuate an energy of the gas in the plasma state, the attenuator being installed at the exhaust pipe at a position closer to the valve than the process chamber, or installed at an upstream side of a connection between the supply pipe and the process chamber, the method comprising:processing the substrate in the process chamber.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus, which includes a process chamber in which a substrate is processed with a gas, a plasma generator configured to convert the gas into a plasma state, a supply pipe installed at an upstream side of the process chamber, an exhaust pipe installed at a downstream side of the process chamber, a valve installed at a downstream side of the exhaust pipe, and an attenuator configured to attenuate an energy of the gas in the plasma state, the attenuator being installed at the exhaust pipe at a position closer to the valve than the process chamber, or installed at an upstream side of a connection between the supply pipe and the process chamber, to perform a process comprising:processing the substrate in the process chamber.
Dependencies are inferred from the claim text.