Method for etching atomic layer

A method for etching an atomic layer, the method comprising:

• providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part;
• generating adsorption gas plasma in the first chamber part;
• adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer;
• generating etching gas plasma in the first chamber part;
• adjusting plasma discharge of the second chamber part by increasing a density of the etching gas plasma of the first chamber part to perform an isotropic desorption on the treatment layer or by decreasing the density of the etching gas plasma of the first chamber part to perform an anisotropic desorption on the treatment layer;
• and
• allowing electrons and ions of the etching gas plasma to be alternately incident into the treatment layer so as to perform desorption of the treatment layer,
• wherein a plurality of grids are provided between the first chamber part and the second chamber part.

A method for etching an atomic layer, the method comprising:

• providing a substrate to a process chamber, wherein the process chamber comprises a first chamber part and a second chamber part, and the substrate is provided in the second chamber part;
• generating adsorption gas plasma in the first chamber part;
• adsorbing radicals of the adsorption gas plasma to the substrate so as to form a treatment layer;
• generating etching gas plasma in the first chamber part;
• adjusting plasma discharge of the second chamber part by increasing a density of the etching gas plasma of the first chamber part to perform an isotropic desorption on the treatment layer or by decreasing the density of the etching gas plasma of the first chamber part to perform an anisotropic desorption on the treatment layer;
• and
• allowing electrons of the etching gas plasma to be incident into the treatment layer so as to remove a portion of the treatment layer;
• and
• allowing ions of the etching gas plasma to be incident into the treatment layer, into which the electrons are incident, to charge-neutralize the treatment layer,
• wherein the radicals of the adsorption gas plasma pass from the first chamber part to the second chamber part through a shutter,
• a removal of the portion of the treatment layer and a charge-neutralization of the treatment layer are repeatedly performed until the treatment layer is completely detached, and
• a voltage applied to a plurality of grids between the first chamber part and the second chamber part or the substrate is adjusted so that the electrons or the ions of the etching gas plasma are incident into the treatment layer.