H01J 2237/3387
Nitriding
H01J2237/3387 (Nitriding) appears on 22 US grants and 33 published applications in this corpus.
Search patents in H01J- Granted patents
- 22
- Published applications
- 33
- Assignees
- 22
- Inventors
- 101
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 1 | 2 |
| 2008 | 0 | 1 |
| 2009 | 2 | 2 |
| 2010 | 1 | 0 |
| 2011 | 1 | 1 |
| 2012 | 0 | 2 |
| 2013 | 0 | 2 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 2 | 0 |
| 2020 | 1 | 1 |
| 2021 | 0 | 1 |
| 2022 | 0 | 2 |
| 2023 | 0 | 4 |
| 2024 | 2 | 2 |
| 2025 | 2 | 3 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Splitter circuit for wafer processing system29 Sep 2026US 12,749,655 B2APPLIED Materials.Inc.
- Plasma processing with tunable nitridation3 Feb 2026US 12,540,384 B2APPLIED Materials.Inc.
- Ignition controlling method, film forming method, and film forming apparatus2 Dec 2025US 12,488,961 B2Tokyo Electron Limited
- Plasma processing method and manufacturing method of semiconductor device1 Jul 2025US 12,347,693 B2Hitachi High-Tech Corporation
- Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor10 Dec 2024US 12,165,848 B2Tokyo Electron Limited
- Plasma processing method9 Jul 2026US 2026/0196449 A1Hitachi High-Tech Corporation
- Processing apparatus and processing method22 Jan 2026US 2026/0024728 A1Tokyo Electron Limited
- Film forming method and film forming apparatus8 Jan 2026US 2026/0009124 A1Tokyo Electron Limited
- Splitter circuit for wafer processing system18 Dec 2025US 2025/0385075 A1APPLIED Materials.Inc.
- Pecvd trench bottom profile control with pulsed dual rf plasma27 Nov 2025US 2025/0364210 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method70US 6,265,327 B1Japan Science and Technology Corporation · 2001
- Apparatus for exposing a substrate to plasma radicals62US 6,450,116 B1APPLIED Materials.Inc. · 2002
- Plasma enhanced thermal treatment apparatus52US 4,870,245 AMotorola, Inc. · 1989
- Method and device for treatment of products in gas-discharge plasma26US 5,503,725 ANovatech SA · 1996
- Method of forming wire interconnection wire26US 6,260,266 B1Matsushita Electric Industrial Co., Ltd. · 2001