Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor
AssigneeTokyo Electron Limited
InventorsKenichi Oyama, Shohei Yamauchi, Kazuya Dobashi, Akitaka Shimizu
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Abstract
The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.
Claims20
A substrate processing method of processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated, the substrate processing method comprising:
- forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma;
- and
- forming a nitride film by modifying at least the surface layer of the oxide film by using a second processing gas including a nitrogen-containing gas and converted into plasma.
A substrate processing apparatus which processes a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated, the substrate processing apparatus comprising:
- a processor configured to form an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma;
- and
- a controller configured to control plasma processing in the processor,
- wherein the controller is further configured to control the plasma processing in the processor to form a nitride film by modifying at least the surface layer of the oxide film by using a second processing gas including a nitrogen-containing gas and converted into plasma.
A method of manufacturing a nanowire or nanosheet transistor by using a substrate in which a silicon layer and a silicon germanium layer are alternately laminated, the method comprising:
- forming an insulating oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma;
- and
- forming a nitride film by modifying at least the surface layer of the insulating oxide film by using a second processing gas including a nitrogen-containing gas and converted into plasma.
Dependencies are inferred from the claim text.