Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method
AssigneesJapan Science and Technology Corporation, Matsushita Electronics Corporation
InventorsHikaru Kobayashi, Kenji Yoneda
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Abstract
Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.
Claims11
A method for treating an insulating film on a surface of a semiconductor substrate, comprising the steps of:
- a) providing a source of thermoelectrons;
- b) generating thermoelectrons with said source;
- c) accelerating said thermoelectrons;
- d) impacting said accelerated thermoelectrons on a gas, thereby generating a plasma;
- and
- e) exposing the insulating film to said plasma.
Dependencies are inferred from the claim text.