H01J 2237/3341
Reactive etching
H01J2237/3341 (Reactive etching) appears on 461 US grants and 683 published applications in this corpus.
Search patents in H01J- Granted patents
- 461
- Published applications
- 683
- Assignees
- 160
- Inventors
- 1,488
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 2 |
| 2002 | 2 | 0 |
| 2003 | 2 | 0 |
| 2004 | 1 | 3 |
| 2005 | 1 | 0 |
| 2006 | 2 | 4 |
| 2007 | 1 | 3 |
| 2008 | 2 | 2 |
| 2009 | 1 | 3 |
| 2010 | 3 | 8 |
| 2011 | 2 | 4 |
| 2012 | 4 | 6 |
| 2013 | 4 | 6 |
| 2014 | 3 | 11 |
| 2015 | 9 | 18 |
| 2016 | 11 | 18 |
| 2017 | 13 | 21 |
| 2018 | 12 | 22 |
| 2019 | 19 | 77 |
| 2020 | 33 | 81 |
| 2021 | 46 | 57 |
| 2022 | 60 | 64 |
| 2023 | 46 | 59 |
| 2024 | 44 | 67 |
| 2025 | 52 | 90 |
| 2026 | 52 | 57 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Pulsed voltage waveform with binary pulses for biasing of plasma6 Oct 2026US 12,755,934 B2APPLIED Materials.Inc.
- Semiconductor manufacturing apparatus and semiconductor device manufacturing method6 Oct 2026US 12,755,946 B2Kioxia Corporation
- Processing chamber, assembly and a method15 Sep 2026US 12,738,458 B2ASM IP Holding B. V.
- Substrate support including multiple radio frequency (RF) electrodes8 Sep 2026US 12,731,766 B2Beijing Naura Microelectronics Equipment Co., Ltd.
- Method for etching atomic layer1 Sep 2026US 12,725,762 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Systems and methods for etching a high aspect ratio structure1 Oct 2026US 2026/0305206 A1Lam Research Corporation
- Plasma processing method and apparatus24 Sep 2026US 2026/0290755 A1Tokyo Electron Limited
- Method for removing by-product in plasma etching apparatus24 Sep 2026US 2026/0290763 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Oxide and metal removal562US 9,309,598 B2APPLIED Materials.Inc. · 2016
- Tin oxide thin film spacers in semiconductor device manufacturing440US 9,824,893 B1Lam Research Corporation · 2017
- Hollow-anode glow discharge apparatus222US 5,248,371 AGeneral Signal Corporation · 1993
- Smooth SiConi etch for silicon-containing films198US 8,501,629 B2APPLIED Materials.Inc. · 2013
- Device for plasma process188US 5,272,417 A1993