Device for plasma process
OwnerTadahiro Ohmiinventor
Life of this patent
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Abstract
A plasma process device for a generating a plasma in a container under reduced pressure and for processing an object. First and second electrodes are placed in opposed positions in the container. The electrodes are plate-like in shape. A protective member made of a stable material covers the first electrode. A means is provided for mounting the object to be processed on the second electrode. A first high-frequency power source is connected to the first electrode. A second high-frequency power source is connected to the second electrode. A gas supply for introducing desired gas into the container is provided. Frequency of the first high-frequency power source is higher than the frequency of the second high-frequency power source.
Claims3
A plasma process device for generating plasma in a container under reduced pressure and for processing an object to be processed, said device usable for various plasma processes, said device comprising:
- at least a first and a second electrode placed at opposing positions in said container, said first and second electrodes being generally planar, a protective member made of a material stable to said plasma and covering said first electrode, holding means for mounting the object to be processed on said second electrode, a first high frequency power source connected to said first electrode for producing a first high frequency, a second high frequency power source connected to said second electrode for producing a second high frequency, and gas supplying means for introducing a desired gas into said container, said first high frequency higher than said second high frequency.
A method for generating plasma in a container under reduced pressure and for processing an object to be processed, said method comprising the steps of:
- providing at least a first and a second electrode placed at opposing positions in said container and formed in plate-like shape;
- providing a protective member made of a material stable to said plasma and covering said first electrode;
- providing means for holding the object to be processed on said second electrode;
- providing a first high frequency power source connected to said first electrode for producing a first high frequency;
- providing a second high frequency power source connected to said second electrode for producing a second high frequency, said first high frequency higher than said second high frequency;
- and
- providing means for introducing the desired gas into said container;
- whereby said device may be used for various plasma processes.
Dependencies are inferred from the claim text.