Substrate support including multiple radio frequency (RF) electrodes

A processing tool for semiconductor processing, the processing tool comprising:

• a chamber having an internal volume within the chamber;
• and
• a substrate support disposed in the internal volume in the chamber, the substrate support comprising a support surface configured to support a semiconductor substrate in the internal volume in the chamber, the substrate support comprising a plurality of radio frequency (RF) electrodes configured to, at least in part, control a plasma in the internal volume in the chamber, a first RF electrode of the plurality of RF electrodes being disposed proximate a center of the support surface, a second RF electrode of the plurality of RF electrodes being disposed proximate a periphery of the support surface, the first RF electrode and the second RF electrode intersecting, laterally between the center and the periphery, an axis parallel to a radial direction in the support surface.

A processing tool for semiconductor processing, the processing tool comprising:

• a chamber having an internal volume within the chamber;
• and
• a substrate support disposed in the internal volume in the chamber, the substrate support comprising a support surface configured to support a semiconductor substrate in the internal volume in the chamber, the substrate support comprising a plurality of radio frequency (RF) electrodes configured to, at least in part, control a plasma in the internal volume in the chamber, a dimension of each lateral side of each RF electrode of the plurality of RF electrodes being equal to or less than 221.1 millimeters, the respective dimension being in a plane parallel to the support surface.