G11C 2207/22
Control and timing of internal memory operations
G11C2207/22 (Control and timing of internal memory operations) appears on 4,220 US grants and 4,305 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,220
- Published applications
- 4,305
- Assignees
- 453
- Inventors
- 4,893
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 6 | 0 |
| 1997 | 9 | 0 |
| 1998 | 13 | 0 |
| 1999 | 6 | 0 |
| 2000 | 32 | 0 |
| 2001 | 36 | 21 |
| 2002 | 62 | 78 |
| 2003 | 95 | 162 |
| 2004 | 141 | 168 |
| 2005 | 158 | 204 |
| 2006 | 154 | 165 |
| 2007 | 146 | 161 |
| 2008 | 145 | 152 |
| 2009 | 123 | 141 |
| 2010 | 146 | 132 |
| 2011 | 133 | 113 |
| 2012 | 128 | 123 |
| 2013 | 119 | 120 |
| 2014 | 130 | 132 |
| 2015 | 128 | 129 |
| 2016 | 146 | 118 |
| 2017 | 157 | 161 |
| 2018 | 184 | 190 |
| 2019 | 243 | 262 |
| 2020 | 260 | 243 |
| 2021 | 251 | 261 |
| 2022 | 252 | 309 |
| 2023 | 257 | 292 |
| 2024 | 265 | 202 |
| 2025 | 194 | 155 |
| 2026 | 101 | 111 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2207/2254CalibrationIndexing code1,756
- G11C 2207/2227Standby or low power modesIndexing code840
- G11C 2207/2245Memory devices with an internal cache bufferIndexing code473
- G11C 2207/2272Latency related aspectsIndexing code450
- G11C 2207/2281Timing of a read operationIndexing code412
- G11C 2207/229Timing of a write operationIndexing code375
- G11C 2207/2209Concurrent read and writeIndexing code144
- G11C 2207/2236CopyIndexing code116
All 10 subgroupsShow fewer
Recent patents
- Calibration devices and operating methods thereof6 Oct 2026US 12,755,766 B2Samsung Electronics Co., Ltd.
- Apparatuses and methods for simultaneous in data path compute operations22 Sep 2026US 12,743,206 B2
- Signal retiming within memory systems22 Sep 2026US 12,744,065 B2Micron Technology, Inc.
- Apparatuses, systems, and methods for data timing alignment with fast alignment mode22 Sep 2026US 12,744,074 B2Micron Technology, Inc.
- Sense amplifier for active standby operation8 Sep 2026US 12,731,632 B2Rambus Inc.
- Self tuning for de-noising using multiple threshold-expert machine learning models8 Oct 2026US 2026/0310551 A1Samsung Electronics Co., Ltd.
- Enhanced valley tracking with trim setting updates in a memory device8 Oct 2026US 2026/0311749 A1Micron Technology, Inc.
- Resample start voltage for calibration in a program operation improvement8 Oct 2026US 2026/0311768 A1Micron Technology, Inc.
- Memory system, memory controller, and method of operating memory controller with training circuit8 Oct 2026US 2026/0311788 A1Samsung Electronics Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0301827 A1Kioxia Corporation
Most cited
By later US patents
- Output enable signal generation circuit of semiconductor memory1,017US 8,400,851 B2SK hynix Inc. · 2013
- Method and apparatus for accessing a memory device430US 6,157,578 ASTMicroelectronics S.r. l. · 2000
- Semiconductor memory device419US 8,310,884 B2Kabushiki Kaisha Toshiba · 2012
- High speed DRAM architecture with uniform access latency419US 8,503,250 B2Mosaid Technologies Incorporated · 2013
- Memory system having synchronous-link DRAM (SLDRAM) devices and controller383US 6,442,644 B1Advanced Memory International, Inc. · 2002