G11C 2207/2245
Memory devices with an internal cache buffer
G11C2207/2245 (Memory devices with an internal cache buffer) appears on 473 US grants and 473 published applications in this corpus.
Search patents in G11C- Granted patents
- 473
- Published applications
- 473
- Assignees
- 124
- Inventors
- 685
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 6 | 7 |
| 2002 | 9 | 10 |
| 2003 | 5 | 12 |
| 2004 | 12 | 20 |
| 2005 | 15 | 18 |
| 2006 | 9 | 27 |
| 2007 | 18 | 10 |
| 2008 | 16 | 21 |
| 2009 | 18 | 15 |
| 2010 | 14 | 10 |
| 2011 | 15 | 6 |
| 2012 | 11 | 15 |
| 2013 | 8 | 11 |
| 2014 | 11 | 12 |
| 2015 | 12 | 11 |
| 2016 | 16 | 13 |
| 2017 | 12 | 23 |
| 2018 | 29 | 35 |
| 2019 | 42 | 40 |
| 2020 | 35 | 37 |
| 2021 | 38 | 34 |
| 2022 | 28 | 28 |
| 2023 | 27 | 21 |
| 2024 | 27 | 19 |
| 2025 | 14 | 8 |
| 2026 | 10 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Apparatuses and methods for simultaneous in data path compute operations22 Sep 2026US 12,743,206 B2
- Error handling for reprojection timeline26 May 2026US 12,640,218 B2QUALCOMM Incorporated
- Memory with virtual page size19 May 2026US 12,632,198 B2
- Semiconductor device12 May 2026US 12,626,736 B2Samsung Electronics Co., Ltd.
- Concurrent page cache resource access in a multi-plane memory device5 May 2026US 12,619,541 B2Micron Technology, Inc.
- System application of dram component with cache mode13 Aug 2026US 2026/0237423 A1Rambus Inc.
- Sense amplifiers as static random access memory cache30 Jul 2026US 2026/0220044 A1Micron Technology, Inc.
- Memory device and method for calibrating impedance of input-output circuit thereof30 Jul 2026US 2026/0221183 A1Samsung Electronics Co., Ltd.
- Nonvolatile memory device including cache latch address information and/or input/output pad address information and method of operating the same16 Jul 2026US 2026/0204318 A1Samsung Electronics Co., Ltd.
- Memory device2 Jul 2026US 2026/0188368 A1SK hynix Inc.
Most cited
By later US patents
- Virtual channel synchronous dynamic random access memory151US 6,473,828 B1NEC Corporation · 2002
- Semiconductor memory device in which use of cache can be selected147US 6,381,190 B1NEC Corporation · 2002
- Semiconductor memory having improved register array access speed134US 6,201,724 B1NEC Corporation · 2001
- Use of data latches in cache operations of non-volatile memories97US 7,206,230 B2SanDisk Corporation · 2007
- Dynamic memory architecture employing passive expiration of data96US 7,290,203 B2International Business Machines Corporation · 2007