G11C 2029/1204
Bit line control
Official title: {Bit line control}
G11C2029/1204 (Bit line control) appears on 574 US grants and 602 published applications in this corpus.
Search patents in G11C- Granted patents
- 574
- Published applications
- 602
- Assignees
- 124
- Inventors
- 1,153
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 4 | 1 |
| 2003 | 4 | 7 |
| 2004 | 10 | 15 |
| 2005 | 10 | 17 |
| 2006 | 20 | 25 |
| 2007 | 15 | 22 |
| 2008 | 19 | 19 |
| 2009 | 24 | 16 |
| 2010 | 11 | 24 |
| 2011 | 13 | 18 |
| 2012 | 16 | 12 |
| 2013 | 29 | 19 |
| 2014 | 20 | 19 |
| 2015 | 18 | 16 |
| 2016 | 26 | 28 |
| 2017 | 27 | 24 |
| 2018 | 25 | 22 |
| 2019 | 30 | 30 |
| 2020 | 33 | 34 |
| 2021 | 28 | 34 |
| 2022 | 45 | 50 |
| 2023 | 50 | 53 |
| 2024 | 40 | 45 |
| 2025 | 32 | 23 |
| 2026 | 22 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Using built-in self test or test results to identify weak memory bits and enable assist circuits when necessary22 Sep 2026US 12,744,098 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method, system and computer program product for memory repair22 Sep 2026US 12,744,103 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Defect detection during erase operations18 Aug 2026US 12,712,041 B2Micron Technology, Inc.
- Semiconductor device and testing method for memory circuit21 Jul 2026US 12,688,903 B2Renesas Electronics Corporation
- Memory device and repair method of the memory device9 Jun 2026US 12,651,641 B2Samsung Electronics Co., Ltd.
- Method for lut-free memory repair27 Aug 2026US 2026/0253660 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory computation device having an improved programming circuit and programming method13 Aug 2026US 2026/0237452 A1STMicroelectronics International N. V.
- Memory device and operating method of the same6 Aug 2026US 2026/0229303 A1SK hynix Inc.
- Bit line direct charge2 Jul 2026US 2026/0188380 A1
- Defect detection method for memory device2 Jul 2026US 2026/0188406 A1Powerchip Semiconductor Manufacturing Corporation
Most cited
By later US patents
- Data path having grounded precharge operation and test compression capability423US 7,061,817 B2Micron Technology, Inc. · 2006
- Dynamic semiconductor memory device capable of rearranging data storage from a one bit/one cell scheme in a normal mode to a one bit/two cell scheme in a twin-cell mode for lengthening a refresh interval101US 6,449,204 B1Mitsubishi Denki Kabushiki Kaisha · 2002
- Sense amplifier with leakage testing and read debug capability89US 7,545,694 B2Cypress Semiconductor Corporation · 2009
- Method of reducing disturbs in non-volatile memory71US 6,717,851 B2SanDisk Corporation · 2004
- Semiconductor leakage current detector and leakage current measurement method, semiconductor leakage current detector with voltage trimming function and reference voltage trimming method, and semiconductor integrated circuit thereof30US 7,446,549 B2Matsushita Electric Industrial Co., Ltd. · 2008