G11C 16/08
Address circuits
Official title: Address circuits; Decoders; Word-line control circuits
G11C16/08 (Address circuits) appears on 6,660 US grants and 7,004 published applications in this corpus.
Search patents in G11C- Granted patents
- 6,660
- Published applications
- 7,004
- Assignees
- 467
- Inventors
- 5,777
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 5 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 7 | 0 |
| 1984 | 11 | 0 |
| 1985 | 7 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 10 | 0 |
| 1989 | 16 | 0 |
| 1990 | 7 | 0 |
| 1991 | 21 | 0 |
| 1992 | 8 | 0 |
| 1993 | 16 | 0 |
| 1994 | 18 | 0 |
| 1995 | 24 | 0 |
| 1996 | 25 | 0 |
| 1997 | 37 | 0 |
| 1998 | 54 | 0 |
| 1999 | 57 | 0 |
| 2000 | 84 | 0 |
| 2001 | 64 | 24 |
| 2002 | 82 | 81 |
| 2003 | 91 | 93 |
| 2004 | 82 | 57 |
| 2005 | 52 | 66 |
| 2006 | 64 | 64 |
| 2007 | 66 | 87 |
| 2008 | 60 | 71 |
| 2009 | 73 | 84 |
| 2010 | 63 | 57 |
| 2011 | 69 | 87 |
| 2012 | 77 | 97 |
| 2013 | 100 | 104 |
| 2014 | 128 | 177 |
| 2015 | 168 | 192 |
| 2016 | 310 | 291 |
| 2017 | 298 | 312 |
| 2018 | 295 | 309 |
| 2019 | 390 | 487 |
| 2020 | 565 | 600 |
| 2021 | 567 | 608 |
| 2022 | 544 | 653 |
| 2023 | 528 | 704 |
| 2024 | 613 | 649 |
| 2025 | 548 | 562 |
| 2026 | 335 | 488 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low-power programmable erasable nonvolatile memory6 Oct 2026US 12,755,787 B2Yield Microelectronics Corp.
- Address fault detection in a memory system6 Oct 2026US 12,755,788 B2Silicon Storage Technology, Inc.
- Control gate signal for data retention in nonvolatile memory6 Oct 2026US 12,755,789 B2SanDisk Technologies LLC
- Re-driving data to a sub-block during programming of multiple sub-blocks6 Oct 2026US 12,755,791 B2Micron Technology, Inc.
- Using non-segregated cells as drain-side select gates for sub-blocks in a memory device6 Oct 2026US 12,755,792 B2Micron Technology, Inc.
- Memory apparatus8 Oct 2026US 2026/0311762 A1Winbond Electronics Corp.
- Memory structure, memory device and operating method thereof8 Oct 2026US 2026/0311763 A1Macronix International Co., Ltd.
- Lateral charge migration handling on edge wordlines of a memory device in a memory sub-system8 Oct 2026US 2026/0311764 A1Micron Technology, Inc.
- Semiconductor structure, method of operating thereof, and semiconductor device8 Oct 2026US 2026/0311765 A1Yangtze Memory Technologies Holding Co., Ltd.
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
Most cited
By later US patents
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Non-volatile memory device, erasing method thereof, and memory system including the same608US 8,553,466 B2Samsung Electronics Co., Ltd. · 2013
- Nonvolatile semiconductor memory device445US 6,301,153 B1Kabushiki Kaisha Toshiba · 2001
- Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM332US 5,890,192 ASanDisk Corporation · 1999
- Moving sectors within a block of information in a flash memory mass storage architecture281US 5,907,856 ALexar Media, Inc. · 1999