G11C 16/0433
Comprising cells containing a single floating gate transistor and one or more
Official title: {comprising cells containing a single floating gate transistor and one or more separate select transistors}
G11C16/0433 (Comprising cells containing a single floating gate transistor and one or more) appears on 1,396 US grants and 1,373 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,396
- Published applications
- 1,373
- Assignees
- 269
- Inventors
- 1,747
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 4 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 7 | 0 |
| 1982 | 3 | 0 |
| 1983 | 4 | 0 |
| 1984 | 6 | 0 |
| 1985 | 6 | 0 |
| 1986 | 5 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 3 | 0 |
| 1990 | 5 | 0 |
| 1991 | 3 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 4 | 0 |
| 1995 | 7 | 0 |
| 1996 | 4 | 0 |
| 1997 | 10 | 0 |
| 1998 | 10 | 0 |
| 1999 | 22 | 0 |
| 2000 | 35 | 0 |
| 2001 | 27 | 6 |
| 2002 | 19 | 30 |
| 2003 | 26 | 28 |
| 2004 | 27 | 38 |
| 2005 | 34 | 71 |
| 2006 | 48 | 49 |
| 2007 | 45 | 68 |
| 2008 | 46 | 51 |
| 2009 | 47 | 43 |
| 2010 | 46 | 27 |
| 2011 | 29 | 53 |
| 2012 | 33 | 58 |
| 2013 | 49 | 42 |
| 2014 | 58 | 41 |
| 2015 | 52 | 54 |
| 2016 | 61 | 49 |
| 2017 | 64 | 63 |
| 2018 | 49 | 45 |
| 2019 | 55 | 48 |
| 2020 | 51 | 63 |
| 2021 | 51 | 57 |
| 2022 | 49 | 77 |
| 2023 | 60 | 89 |
| 2024 | 82 | 114 |
| 2025 | 68 | 61 |
| 2026 | 60 | 48 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Re-driving data to a sub-block during programming of multiple sub-blocks6 Oct 2026US 12,755,791 B2Micron Technology, Inc.
- Using non-segregated cells as drain-side select gates for sub-blocks in a memory device6 Oct 2026US 12,755,792 B2Micron Technology, Inc.
- Memory array and methods of operation6 Oct 2026US 12,755,793 B2Microchip Technology Incorporated
- Nonvolatile memory with self-tracking IREF6 Oct 2026US 12,755,799 B2Texas Instruments Incorporated
- Cascade model for determining read level voltage offsets based on wordline group memory cells29 Sep 2026US 12,749,541 B2Micron Technology, Inc.
- Memory device with a precharge circuit8 Oct 2026US 2026/0311772 A1
- Three-dimensional one time programmable memory1 Oct 2026US 2026/0301819 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory devices and operating methods thereof, memory systems, word line voltage control circuits17 Sep 2026US 2026/0279447 A1Yangtze Memory Technologies Co., Ltd.
- Semiconductor device with alternating bitlines and string select lines17 Sep 2026US 2026/0279448 A1Samsung Electronics Co., Ltd.
- Memory device and operation method thereof17 Sep 2026US 2026/0279452 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof368US 9,780,225 B2Semiconductor Energy Laboratory Co.Ltd. · 2017
- Nonvolatile static random access memory devices292US 4,300,212 AXicor, Inc. · 1981
- Method of programming an electrically alterable nonvolatile memory219US 4,357,685 ASGS-ATES Componenti Elettronici S.p.A. · 1982
- Split-gate vertically oriented EEPROM device and process151US 6,433,382 B1Motorola, Inc. · 2002
- Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and method of operating140US 10,204,684 B22019