G11C 13/0026
Bit-line or column circuits
Official title: {Bit-line or column circuits}
G11C13/0026 (Bit-line or column circuits) appears on 1,516 US grants and 1,671 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,516
- Published applications
- 1,671
- Assignees
- 213
- Inventors
- 1,774
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 2 |
| 2004 | 1 | 4 |
| 2005 | 2 | 6 |
| 2006 | 6 | 7 |
| 2007 | 8 | 11 |
| 2008 | 7 | 9 |
| 2009 | 6 | 23 |
| 2010 | 12 | 39 |
| 2011 | 36 | 30 |
| 2012 | 37 | 45 |
| 2013 | 29 | 20 |
| 2014 | 35 | 37 |
| 2015 | 44 | 61 |
| 2016 | 91 | 107 |
| 2017 | 100 | 95 |
| 2018 | 108 | 99 |
| 2019 | 105 | 154 |
| 2020 | 181 | 175 |
| 2021 | 174 | 191 |
| 2022 | 147 | 154 |
| 2023 | 119 | 136 |
| 2024 | 123 | 105 |
| 2025 | 103 | 90 |
| 2026 | 42 | 71 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Structure for multiple sense amplifiers of memory device29 Sep 2026US 12,749,529 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory circuit comprising electronic cells with ovonic threshold switching layers and a control circuit29 Sep 2026US 12,751,017 B2STMicroelectronics International N. V.
- Memory device with sub-arrays and selection switches for reducing bit line interference25 Aug 2026US 12,718,852 B2Rohm Co., Ltd.
- Breakdown mitigation for programmable resistance memory element25 Aug 2026US 12,718,858 B2SanDisk Technologies LLC
- Apparatus and methods for decoder modules for non-volatile memory25 Aug 2026US 12,718,859 B2SanDisk Tehnologies LLC
- Memory device and operating method of the same1 Oct 2026US 2026/0301809 A1SK hynix Inc.
- Efficient and high performance write architecture for high density resistive random access memory24 Sep 2026US 2026/0290450 A1IM2 Solutions, Inc.
- Memory including variable resistor24 Sep 2026US 2026/0290451 A1SK hynix Inc.
- In-memory computing architecture and operating method thereof24 Sep 2026US 2026/0290452 A1Peking University
- Memory device3 Sep 2026US 2026/0260679 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011
- Methods and apparatus for vertical bit line structures in three-dimensional nonvolatile memory188US 9,595,530 B1SanDisk Technologies LLC · 2017
- Vertical thin film transistors with surround gates188US 9,673,257 B1SanDisk Technologies LLC · 2017
- Memories with cylindrical read/write stacks185US 9,227,456 B2SanDisk 3D LLC · 2016
- Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof159US 8,824,183 B2SanDisk 3D LLC · 2014