Memory device

A temperature compensation circuit comprising:

• a reference voltage generator circuit, wherein the reference voltage generator circuit is configured to generate a temperature adjusted reference voltage;
• and
• a voltage regulator circuit connected to the reference voltage generator circuit, wherein the voltage regulator circuit is configured to:
• compare an instantaneous write voltage of a bit line of a memory device with the temperature adjusted reference voltage,
• select a voltage source from a plurality of voltage sources based on comparing the instantaneous write voltage with the temperature adjusted reference voltage;
• and
• connect the selected voltage source to the bit line of the memory device.

A voltage control circuit comprising:

• a voltage detection circuit configured to detect an instantaneous supply voltage;
• and
• a voltage source selection circuit connected to the voltage detection circuit, wherein the voltage source selection circuit is configured to:
• select a voltage source from a plurality of voltage sources based on the detected instantaneous supply voltage, and
• connect the selected voltage source to a selected bit line of a memory device to provide a write voltage.