G03F 7/11
Having cover layers or intermediate layers
Official title: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)}
G03F7/11 (Having cover layers or intermediate layers) appears on 1,888 US grants and 2,680 published applications in this corpus.
Search patents in G03F- Granted patents
- 1,888
- Published applications
- 2,680
- Assignees
- 448
- Inventors
- 3,577
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 7 | 0 |
| 1982 | 7 | 0 |
| 1983 | 5 | 0 |
| 1984 | 7 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 9 | 0 |
| 1988 | 6 | 0 |
| 1989 | 4 | 0 |
| 1990 | 6 | 0 |
| 1991 | 10 | 0 |
| 1992 | 4 | 0 |
| 1993 | 7 | 0 |
| 1994 | 15 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 13 | 0 |
| 1998 | 11 | 0 |
| 1999 | 6 | 0 |
| 2000 | 10 | 0 |
| 2001 | 8 | 6 |
| 2002 | 21 | 22 |
| 2003 | 15 | 28 |
| 2004 | 24 | 38 |
| 2005 | 19 | 56 |
| 2006 | 28 | 79 |
| 2007 | 29 | 95 |
| 2008 | 41 | 93 |
| 2009 | 39 | 74 |
| 2010 | 64 | 75 |
| 2011 | 55 | 65 |
| 2012 | 55 | 102 |
| 2013 | 67 | 105 |
| 2014 | 105 | 124 |
| 2015 | 128 | 140 |
| 2016 | 125 | 151 |
| 2017 | 98 | 148 |
| 2018 | 102 | 98 |
| 2019 | 106 | 134 |
| 2020 | 83 | 133 |
| 2021 | 63 | 144 |
| 2022 | 78 | 143 |
| 2023 | 106 | 157 |
| 2024 | 96 | 157 |
| 2025 | 94 | 172 |
| 2026 | 66 | 141 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- EUV resist underlayer film-forming composition6 Oct 2026US 12,754,479 B2Nissan Chemical Corporation
- Hardmask composition, hardmask layer, and pattern forming method6 Oct 2026US 12,754,481 B2Samsung SDI.Co., Ltd.
- Resist underlayer film-forming composition containing terminal-blocked reaction product22 Sep 2026US 12,743,019 B2Nissan Chemical Corporation
- Providing a barrier layer for photoresist processing15 Sep 2026US 12,736,881 B2Tokyo Electron Limited
- Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same1 Sep 2026US 12,724,346 B2Inha University Research and Business Foundation
- Wet removable silicon-containing resist underlayer film-forming composition8 Oct 2026US 2026/0310080 A1Nissan Chemical Corporation
- Resist underlayer film-forming composition8 Oct 2026US 2026/0310081 A1Nissan Chemical Corporation
- Wet-removable silicon-containing resist underlayer film-forming composition8 Oct 2026US 2026/0314341 A1Nissan Chemical Corporation
- Method for forming an underlayer, semiconductor structure, and reactor system1 Oct 2026US 2026/0299421 A1ASM IP Holding B. V.
- Semiconductor method of manufacture and layer composition1 Oct 2026US 2026/0299424 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Lithography patterning with a gas phase resist422US 10,018,920 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- Pattern definition in an organic layer359US 3,962,004 ARCA Corporation · 1976
- Assist layers for EUV lithography302US 8,968,989 B2Brewer Science Inc. · 2015
- PECVD films for EUV lithography291US 9,618,846 B2Lam Research Corporation · 2017
- Photosensitive material and method of lithography178US 9,213,234 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015