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US 12,754,481 B2Granted
Hardmask composition, hardmask layer, and pattern forming method
AssigneeSamsung SDI Co., Ltd.
InventorJaebum Lim
Life of this patent
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Abstract
The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition. In Chemical Formula 1, the definitions of A, R1 to R5, and n are as described in the specification.
Claims16
A pattern forming method, the method comprising:
- applying a hardmask composition comprising a compound represented by Chemical Formula 1 and a solvent on a material layer and heat-treating the resultant to form a hardmask layer,
- forming a photoresist layer on the hardmask layer,
- exposing and developing the photoresist layer to form a photoresist pattern,
- selectively removing the hardmask layer using the photoresist pattern to expose a portion of the material layer, and
- etching an exposed part of the material layer:
- wherein, in Chemical Formula 1,
- A is a C6 to C30 aromatic moiety,
- R1 to R5 are each independently hydrogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof or a group represented by Chemical Formula 2,
- at least one of R1 to R5 is a group represented by Chemical Formula 2,
- at least one of R1 to R5 not represented by Chemical Formula 2 is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof, and
- n is an integer greater than or equal to 2,
- wherein, in Chemical Formula 2,
- X is a substituted or unsubstituted C6 to C30 arylene group,
- Y is a substituted C6 to C60 aryl group or a substituted or unsubstituted C3 to C60 heteroaryl group, wherein the substituted C6 to C60 aryl group includes a substituent selected from a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthiol group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof,
- m is 0 or 1, and
- indicates a linking point with Chemical Formula 1, and
- wherein when A is a C6 aromatic moiety and Y is a substituted C6 to C60 aryl group, Y includes a substituent selected from a substituted or unsubstituted C1 to C30 alkylthiol group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C3 to C30 heteroaryl group that is not a pyridine group, or a combination thereof.
14 more elements
A pattern forming method, the method comprising:
- applying a hardmask composition comprising a compound represented by Chemical Formula 1 and a solvent on a material layer and heat-treating the resultant to form a hardmask layer,
- forming a photoresist layer on the hardmask layer,
- exposing and developing the photoresist layer to form a photoresist pattern,
- selectively removing the hardmask layer using the photoresist pattern to expose a portion of the material layer, and
- etching an exposed part of the material layer:
- wherein, in Chemical Formula 1,
- A is a C6 to C30 aromatic moiety,
- R1 to R5 are each independently hydrogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof or a group represented by Chemical Formula 4,
- at least one of R1 to R5 is a group represented by Chemical Formula 4,
- at least one of R1 to R5 not represented by Chemical Formula 4 is a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, or a combination thereof, and
- n is an integer greater than or equal to 2,
- wherein, in Chemical Formula 4,
- X is a substituted or unsubstituted C6 to C30 arylene group,
- R6 to R10 of Chemical Formula 4 are each independently a substituted or unsubstituted C3 to C30 nitrogen-containing heteroaryl group selected from Group 6 or a substituted or unsubstituted C6 to C30 aryl group selected from Group 7, and
- at least one of R7, R8, and R10 is a substituted or unsubstituted C3 to C30 nitrogen-containing heteroaryl group selected from Group 6;
- or a C6 to C30 aryl group substituted with a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthiol group, a substituted or unsubstituted C1 to C20 alkylamine group, or a combination thereof which is selected from Group 7:
- ’ indicates a linking point with Chemical Formula 1, and
- provided that when A of Chemical Formula 1 is a C6 aromatic moiety, at least one of R6 to R10 of Chemical Formula 4 is a substituted or unsubstituted C3 to C30 nitrogen-containing heteroaryl group that is not a pyridine group;
- or a C6 to C30 aryl group substituted with a hydroxy group, an amine group, a mercapto group, a substituted or unsubstituted C1 to C30 alkylthiol group, a substituted or unsubstituted C1 to C20 alkylamine group, or a combination thereof.
16 more elements
Dependencies are inferred from the claim text.