Pattern definition in an organic layer
AssigneeRCA Corporation
InventorKurt Jacques Sonneborn
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Abstract
An improved method of defining a pattern in a layer of organic material includes depositing a relatively thin layer of silicon dioxide on the layer of organic material, applying to the silicon dioxide layer a film of primer solution comprising a silane derivative, and then forming a photoresist etch mask on the film. By utilizing an ultrasonic etch bath, a uniform and well-defined pattern is etched in the layer of organic material.
Claims8
In a method of forming a pattern in a layer of cured organic material on a substrate wherein an etch mask comprising a layer of photoresist is formed above said layer of organic material using conventional photolithographic processes and said pattern defined by said mask is etched in said layer of organic material, the improvement in said method comprising the step of depositing a layer of silicon dioxide on said layer of cured organic material prior to forming said etch mask.
A method of forming a pattern in a layer of cured organic material on a substrate comprising the steps of:
- depositing a layer of silicon dioxide on said layer of cured organic material,
- applying a film of primer solution comprising a silane derivative on said layer of silicon dioxide,
- forming a layer of photoresist on said film,
- exposing selectively through a mask said layer of photoresist to light,
- developing said layer of photoresist,
- etching said pattern in said layer of cured organic material in an ultrasonic etch bath utilizing said layer of photoresist as an etch mask, and
- removing said layer of photoresist.
Dependencies are inferred from the claim text.