Providing a barrier layer for photoresist processing
AssigneeTokyo Electron Limited
InventorsMichael Carcasi, Ryan Burns, Lior Huli
Life of this patent
Estimating the term…
Abstract
In certain embodiments, a method of microfabrication includes forming a layer stack on a wafer, the layer stack including a photoresist layer formed on an underlying layer. The method further includes depositing a barrier layer on the photoresist layer, the barrier layer selected to prevent penetration from one or more environmental components. The method further includes exposing the photoresist layer to a pattern of actinic radiation and developing the photoresist layer.
Claims20
A method of microfabrication, the method comprising:
- forming a layer stack on a wafer, the layer stack including a photoresist layer formed on an underlying layer;
- exposing the photoresist layer to a pattern of actinic radiation to pattern the photoresist layer;
- depositing, subsequent to exposing the photoresist layer to the pattern of actinic radiation, a barrier layer on the photoresist layer, the barrier layer selected to prevent penetration from one or more environmental components, wherein neither the barrier layer nor another barrier layer selected to prevent penetration from the one or more environmental components is present on the photoresist layer during the exposing of the photoresist layer to the pattern of actinic radiation to pattern the photoresist layer;
- and
- developing the photoresist layer.
A method of microfabrication, the method comprising:
- receiving a wafer to be patterned by photolithography;
- selecting a photoresist formula including photoresist components and barrier layer components, the barrier layer components comprising a fluorinated polynorbornene, the photoresist formula configured to self-segregate so that the barrier layer components separate vertically above the photoresist components;
- depositing the photoresist formula on the wafer by spin-on deposition, the photoresist formula self-segregating into a photoresist layer underlying a barrier layer;
- executing a post-deposition bake;
- exposing, subsequent to executing the post-deposition bake, the photoresist layer to a pattern of actinic radiation;
- and
- developing the photoresist layer.
A method of microfabrication, the method comprising:
- forming a layer stack on a wafer, the layer stack including a photoresist layer formed over one or more underlying layers;
- exposing the photoresist layer to a pattern of actinic radiation;
- depositing, subsequent to exposing the photoresist layer to the pattern of actinic radiation, a barrier layer on the photoresist layer by vapor-phase deposition, the barrier layer selected to prevent penetration from one or more environmental components, the vapor-phase deposition forming the barrier layer on a top surface of the photoresist layer;
- performing, subsequent to depositing the barrier layer on the photoresist layer, a post exposure bake;
- and
- developing the photoresist layer.
Dependencies are inferred from the claim text.