C30B 29/68
Crystals with laminate structure
Official title: Crystals with laminate structure, e.g. "superlattices"
C30B29/68 (Crystals with laminate structure) appears on 359 US grants and 430 published applications in this corpus.
Search patents in C30B- Granted patents
- 359
- Published applications
- 430
- Assignees
- 236
- Inventors
- 931
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 7 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 9 | 0 |
| 1996 | 7 | 0 |
| 1997 | 11 | 0 |
| 1998 | 7 | 0 |
| 1999 | 6 | 0 |
| 2000 | 6 | 0 |
| 2001 | 6 | 2 |
| 2002 | 5 | 4 |
| 2003 | 9 | 7 |
| 2004 | 4 | 10 |
| 2005 | 3 | 19 |
| 2006 | 7 | 6 |
| 2007 | 5 | 3 |
| 2008 | 3 | 2 |
| 2009 | 3 | 4 |
| 2010 | 2 | 1 |
| 2011 | 4 | 0 |
| 2012 | 4 | 5 |
| 2013 | 6 | 16 |
| 2014 | 1 | 16 |
| 2015 | 16 | 21 |
| 2016 | 9 | 27 |
| 2017 | 17 | 22 |
| 2018 | 17 | 22 |
| 2019 | 20 | 26 |
| 2020 | 18 | 22 |
| 2021 | 15 | 25 |
| 2022 | 18 | 26 |
| 2023 | 29 | 38 |
| 2024 | 26 | 43 |
| 2025 | 21 | 34 |
| 2026 | 21 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Process for producing a crystalline layer18 Aug 2026US 12,709,820 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Process for manufacturing a phase change material with a crystallographic structure of layers separated by van der Waals pseudo-gaps28 Jul 2026US 12,696,689 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Film structure and method for producing the same21 Jul 2026US 12,690,393 B2I-PEX Piezo Solutions Inc.
- Devices comprising a thick (alzga1-z)2o3 layer on a (001) ga2o3 substrate using a (alxga1-x)2o3 buffer layer, and methods of making and use thereof1 Oct 2026US 2026/0304878 A1Ohio State Innovation Foundation
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Fluorite-based material thin film and semiconductor device comprising the same27 Aug 2026US 2026/0250147 A1Samsung Electronics Co., Ltd.
- Methods for the provision of a coated graphene layer structure on a silicon-containing wafer20 Aug 2026US 2026/0247936 A1Paragraf Limited
- Metal oxide film and semiconductor device13 Aug 2026US 2026/0239673 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film4,076US 7,061,014 B2Japan Science and Technology Agency · 2006
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Methods and apparatus for material deposition577US 5,119,760 ASymetrix Corporation · 1992
- Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition442US 6,110,531 ASymetrix Corporation · 2000
- Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current416US 5,519,234 ASymetrix Corporation · 1996