Film structure and method for producing the same
AssigneeI-PEX Piezo Solutions Inc.
InventorsAkio Konishi, Hiroaki Kanamori
Life of this patent
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Abstract
A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.
Claims15
A film structure comprising:
- a substrate;
- and
- a buffer film formed on the substrate;
- wherein;
- the substrate is a 36° to 48° rotated Y-cut Si substrate, or
- the substrate is a SOI substrate comprising a base substance made of a 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer,
- a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance, and
- the buffer film comprises ZrO2 epitaxially grown on the substrate.
A method for producing a film structure comprising:
- (a) a step for preparing a substrate;
- and
- (b) a step for forming a buffer film on the substrate;
- wherein
- the step (a) comprises preparing (1) a 36° to 48° rotated Y-cut substrate is prepared, or (2) a SOI substrate comprising a base substance made of a 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer,
- a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance, and
- the step (b) comprises forming the buffer film comprising ZrO2 epitaxially grown on the substrate.
Dependencies are inferred from the claim text.