Process for manufacturing a phase change material with a crystallographic structure of layers separated by van der Waals pseudo-gaps
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsDamien Terebenec, Pierre-Olivier Noe
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Abstract
A method for manufacturing a phase change stack having a crystallographic structure made of layers separated by van der Waals pseudo-gaps, may include: providing a substrate; forming the stack on the substrate, including (i) forming the first layer, and (ii) forming the second layer on the first layer. Advantageously, after formation of the stack, at least one curing annealing is carried out. The curing annealing may be such that the stack has, after annealing, a nominal defect rate less than at least 50% of an initial defect rate of the stack.
Claims20
A method for manufacturing a phase change stack, the method comprising:
- forming an orientation layer, configured to orient the phase change stack about a crystallographic axis c;
- and, thereafter
- forming a phase change stack on a surface of a substrate, comprising (i) forming a first layer comprising a first material A, and (ii) forming a second layer, comprising a second material B, different from the first material A, on the first layer;
- and
- after the forming of the phase change stack, first curing annealing such that the phase change stack has, after the curing annealing, a once-annealed nominal-defect rate less than 50% of an initial defect rate of the phase change stack, taken before the curing annealing,
- wherein the phase change stack has a crystallographic structure made of layers separated by van der Waals pseudo-gaps and comprises:
- the first layer of the first material A, and
- the second layer of the second material B, and
- wherein the forming of the phase change stack is done on a surface of the orientation layer.
A method for manufacturing a phase change stack, the method comprising:
- forming a phase change stack on a surface of a substrate, comprising (i) forming a first layer comprising a first material A, and (ii) forming a second layer, comprising a second material B, different from the first material A, on the first layer;
- and
- after the forming of the phase change stack, first curing annealing such that the phase change stack has, after the curing annealing, a once-annealed defect rate less than 50% of an initial defect rate of the phase change stack, taken before the curing annealing,
- wherein the phase change stack has a crystallographic structure made of layers separated by van der Waals pseudo-gaps and comprises:
- the first layer of the first material A, and
- the second layer of the second material B,
- wherein each van der Waals pseudo-gap separating two layers of the crystallographic structure is formed as a spacing between two pure planes of one same atom type, and
- wherein the spacing has a dimension normal to the planes less than or equal to twice a van der Waals radius of the atom type.
Dependencies are inferred from the claim text.