C30B 15/00
Single-crystal growth by pulling from a melt
Official title: Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00)
C30B15/00 (Single-crystal growth by pulling from a melt) appears on 2,952 US grants and 2,439 published applications in this corpus.
Search patents in C30B- Granted patents
- 2,952
- Published applications
- 2,439
- Assignees
- 793
- Inventors
- 4,393
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 29 | 0 |
| 1977 | 23 | 0 |
| 1978 | 17 | 0 |
| 1979 | 14 | 0 |
| 1980 | 41 | 0 |
| 1981 | 34 | 0 |
| 1982 | 36 | 0 |
| 1983 | 24 | 0 |
| 1984 | 22 | 0 |
| 1985 | 35 | 0 |
| 1986 | 50 | 0 |
| 1987 | 42 | 0 |
| 1988 | 22 | 0 |
| 1989 | 34 | 0 |
| 1990 | 50 | 0 |
| 1991 | 34 | 0 |
| 1992 | 48 | 0 |
| 1993 | 33 | 0 |
| 1994 | 52 | 0 |
| 1995 | 45 | 0 |
| 1996 | 37 | 0 |
| 1997 | 43 | 0 |
| 1998 | 92 | 0 |
| 1999 | 143 | 0 |
| 2000 | 111 | 0 |
| 2001 | 101 | 38 |
| 2002 | 91 | 85 |
| 2003 | 86 | 94 |
| 2004 | 60 | 76 |
| 2005 | 47 | 70 |
| 2006 | 41 | 78 |
| 2007 | 65 | 92 |
| 2008 | 56 | 85 |
| 2009 | 43 | 112 |
| 2010 | 45 | 145 |
| 2011 | 54 | 111 |
| 2012 | 80 | 102 |
| 2013 | 81 | 112 |
| 2014 | 89 | 98 |
| 2015 | 68 | 92 |
| 2016 | 74 | 91 |
| 2017 | 88 | 84 |
| 2018 | 84 | 88 |
| 2019 | 79 | 71 |
| 2020 | 65 | 103 |
| 2021 | 69 | 92 |
| 2022 | 64 | 116 |
| 2023 | 71 | 112 |
| 2024 | 91 | 133 |
| 2025 | 91 | 93 |
| 2026 | 58 | 66 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C30B 15/20Controlling or regulating881
- C30B 15/10Crucibles or containers for supporting the melt590
- C30B 15/14Heating of the melt or the crystallised materials584
- C30B 15/02Adding crystallising materials or reactants forming it in situ to the melt511
- C30B 15/30Mechanisms for rotating or moving either the melt or the crystal429
- C30B 15/34Edge-defined film-fed crystal-growth using dies or slits160
- C30B 15/002Continuous growth121
- C30B 15/36Single-crystal growth by pulling from a melt: characterised by the seed99
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Method for evaluating quartz glass crucible, method for manufacturing the same, and quartz glass crucible22 Sep 2026US 12,742,254 B2Shin-Etsu Quartz Products Co., Ltd.
- Heater and single crystal growing apparatus22 Sep 2026US 12,742,255 B2Xi'an Eswin Material Technology Co., Ltd.
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Methods and devices for growing scintillation crystals with multi-component garnet structure22 Sep 2026US 12,742,258 B2Boya Advanced Materials Co., Ltd.
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- Open czochralski furnace for single crystal growth8 Oct 2026US 2026/0308801 A1Boya Advanced Materials Co., Ltd.
- Single crystal furnace, heat conduction tool, and crystal pulling control method for single crystal furnace1 Oct 2026US 2026/0297795 A1Longi Green Energy Technology Co., Ltd.
- Water-Cooling Jacket and Single Crystal Furnace1 Oct 2026US 2026/0297796 A1Xi'an Eswin Material Technology Co., Ltd.
- Methods for preparing an ingot in an ingot puller apparatus having a heat shield disposed below a side heater1 Oct 2026US 2026/0297797 A1GlobalWafers Co., Ltd.
Most cited
By later US patents
- Silicon focus ring and method for producing the same468US 6,815,352 B1Shin-Etsu Chemical Co., Ltd. · 2004
- Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method99US 6,270,569 B1Hitachi Cable, Ltd. · 2001
- Pressurized skull crucible for crystal growth using the Czochralski technique95US 5,863,326 ACermet, Inc. · 1999
- Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same95US 8,063,466 B2Sumco Corporation · 2011
- Process for producing silicon semiconductor wafers with low defect density94US 5,935,320 AWacker Siltronic Gesellschaft fur Halbleitermaterialien AG · 1999