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AssigneeHitachi Cable, Ltd.
InventorsMasatomo Shibata, Takashi Furuya
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A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.
A nitride crystal fabricating method comprising the steps of heating a Group III metal element so as to melt the Group III metal element, injecting a gas containing nitrogen atoms into the melt of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, and thereby producing a Group III nitride microcrystal in the melt of the Group III metal element, the microcrystal being produced such that, when produced, all surfaces of the microcrystal are fully covered with the melt of the Group III metal element.
A nitride crystal fabricating method comprising the steps of:
A nitride crystal fabricating method comprising the steps of immersing a substrate crystal in a Group III element melt which is heated at a temperature lower than the melting point of a nitride to be obtained and fused, introducing a gas containing nitrogen into the Group III element melt so as to make bubbles of the gas containing nitrogen intermittently come into contact with the surface of said substrate crystal in the Group III element melt, and thereby epitaxially growing a nitride single crystal of the Group III element on the surface of said substrate crystal.
A nitride crystal growth method comprising a step of charging nitride crystal powders and a liquid encapsulating material into a cylinder and heating the powders and material while pressurizing by a piston, wherein the powders and material are heated until lust before the nitride crystal powders melt and the nitride crystal is grown in a solid phase state.
A nitride crystal growth method of growing a nitride crystal by heating a flux and nitride crystal powders under pressure, dissolving nitride powders into the flux, and cooling the mixture, wherein the heating temperature of the flux is 800° C. or higher.
Dependencies are inferred from the claim text.