C30B 15/36
Single-crystal growth by pulling from a melt: characterised by the seed
Official title: characterised by the seed, e.g. its crystallographic orientation
C30B15/36 (Single-crystal growth by pulling from a melt: characterised by the seed) appears on 99 US grants and 99 published applications in this corpus.
Search patents in C30B- Granted patents
- 99
- Published applications
- 99
- Assignees
- 90
- Inventors
- 278
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 3 |
| 2002 | 3 | 4 |
| 2003 | 5 | 4 |
| 2004 | 1 | 3 |
| 2005 | 1 | 5 |
| 2006 | 2 | 1 |
| 2007 | 4 | 2 |
| 2008 | 0 | 6 |
| 2009 | 0 | 8 |
| 2010 | 3 | 2 |
| 2011 | 1 | 3 |
| 2012 | 4 | 1 |
| 2013 | 1 | 6 |
| 2014 | 2 | 4 |
| 2015 | 0 | 3 |
| 2016 | 2 | 5 |
| 2017 | 2 | 3 |
| 2018 | 6 | 2 |
| 2019 | 4 | 4 |
| 2020 | 4 | 8 |
| 2021 | 3 | 4 |
| 2022 | 3 | 5 |
| 2023 | 1 | 5 |
| 2024 | 6 | 3 |
| 2025 | 2 | 3 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal with an offcut19 May 2026US 12,630,941 B2Luxium Solutions, LLC
- Piezoelectric single crystal M3RE(PO4)3 and the preparation method and application thereof7 Apr 2026US 12,595,590 B2Shandong University
- Bismuth-substituted rare earth iron garnet single crystal, faraday rotator, optical isolator, and production method for bismuth-substituted rare earth iron garnet single crystal24 Mar 2026US 12,585,146 B2Shin-Etsu Chemical Co., Ltd.
- Cylindrical silicon ingot manufacturing method23 Sep 2025US 12,421,623 B2BCnC Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal with an offcut3 Sep 2026US 2026/0258579 A1Luxium Solutions, LLC
- Cylindrical silicon ingot manufacturing method26 Feb 2026US 2026/0055533 A1BCnC Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal4 Dec 2025US 2025/0369151 A1Luxium Solutions, LLC
- Apparatus and method for growth of gallium oxide crystal with an offcut4 Dec 2025US 2025/0369152 A1Luxium Solutions, LLC
- Single crystal silicon ingot and method of growing the same27 Nov 2025US 2025/0361646 A1SK Siltron Co., Ltd.
Most cited
By later US patents
- Process for the manufacture of coarsely crystalline to monocrystalline sheets of semiconductor material32US 4,447,289 AHeliotronic Forschungs- und Entwicklungsgesellschaft fur Solarzellen-Grundstoffe mbH · 1984
- Method for producing disc or band-shaped SI crystals with columnar structure for solar cells17US 4,305,776 ASiemens Aktiengesellschaft · 1981
- Method of controlling defect orientation in silicon crystal ribbon growth15US 4,121,965 AThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration · 1978
- Method and apparatus for pulling a single crystal14US 5,916,364 ASumitomo Sitix Corporation · 1999
- Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements13US 7,255,740 B2Schott AG · 2007