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US 2026/0258579 A1Published application
Apparatus and method for growth of gallium oxide crystal with an offcut
AssigneeLuxium Solutions, LLC
InventorsDrew T. HAVEN, David B. JOYCE, John M. FRANK
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Abstract
Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principal plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
Claims20
A Ga2O3 single crystal, comprising:
- a single gallium oxide crystal sheet whose principal plane is offcut from a (100) crystallographic orientation, wherein the single crystal has a full width half mass (FWHM) of less than 50 arcsec.
Dependencies are inferred from the claim text.