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US 12,630,941 B2Granted
Apparatus and method for growth of gallium oxide crystal with an offcut
AssigneeLuxium Solutions, LLC
InventorsDrew T. Haven, David B. Joyce, John M. Frank
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Abstract
Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principal plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50 arcsec.
Claims15
A method of growing a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method, comprising:
- bringing a seed crystal having a (100) crystallographic orientation in contact with a Ga2O3 base melt, wherein a growth face is parallel to the base melt;
- rotate a shaft clockwise or counterclockwise about the pull direction by a degree of rotation, wherein the degree of rotation is greater than 2 degrees and less than 20 degrees;
- pulling the seed crystal to grow the Ga2O3 based single crystal, wherein the Ga2O3 based single crystal has a (010) crystallographic orientation as it is being grown;
- and
- cooling the β-Ga2O3 based single crystal after it has reached a length that is greater than 40 mm, wherein the single crystal has a full width half mass (FWHM) of less than 50 arcsec.
2 more elements
Dependencies are inferred from the claim text.