C30B 15/02
Adding crystallising materials or reactants forming it in situ to the melt
Official title: adding crystallising materials or reactants forming it in situ to the melt
C30B15/02 (Adding crystallising materials or reactants forming it in situ to the melt) appears on 511 US grants and 536 published applications in this corpus.
Search patents in C30B- Granted patents
- 511
- Published applications
- 536
- Assignees
- 222
- Inventors
- 1,033
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 4 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 6 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 6 | 0 |
| 1991 | 6 | 0 |
| 1992 | 11 | 0 |
| 1993 | 6 | 0 |
| 1994 | 8 | 0 |
| 1995 | 7 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 8 | 0 |
| 1999 | 16 | 0 |
| 2000 | 17 | 0 |
| 2001 | 14 | 5 |
| 2002 | 12 | 7 |
| 2003 | 5 | 15 |
| 2004 | 10 | 14 |
| 2005 | 11 | 7 |
| 2006 | 10 | 8 |
| 2007 | 5 | 15 |
| 2008 | 6 | 6 |
| 2009 | 3 | 19 |
| 2010 | 4 | 19 |
| 2011 | 11 | 26 |
| 2012 | 8 | 17 |
| 2013 | 13 | 17 |
| 2014 | 16 | 17 |
| 2015 | 10 | 27 |
| 2016 | 11 | 26 |
| 2017 | 18 | 23 |
| 2018 | 21 | 28 |
| 2019 | 26 | 20 |
| 2020 | 21 | 31 |
| 2021 | 22 | 24 |
| 2022 | 15 | 26 |
| 2023 | 20 | 36 |
| 2024 | 29 | 51 |
| 2025 | 24 | 29 |
| 2026 | 25 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Methods and devices for growing scintillation crystals with multi-component garnet structure22 Sep 2026US 12,742,258 B2Boya Advanced Materials Co., Ltd.
- Method of producing a crystal for a scintillation crystal detector and a crystal for a scintillation crystal detector8 Sep 2026US 12,729,455 B2Crytur, Spol.S R.O.
- Method for producing sic single crystal7 Jul 2026US 12,674,249 B2Shin-Etsu Chemical Co., Ltd.
- Silicon single crystal growing method23 Jun 2026US 12,662,748 B2Sumco Corporation
- Ingot growth device and method for controlling ingot growth8 Oct 2026US 2026/0308800 A1Hanwha Solutions Corporation
- Crystal growth method, single crystal furnace vacuum system, and czochralski crystal growth device1 Oct 2026US 2026/0297798 A1Longi Green Energy Technology Co., Ltd.
- Methods for adding a plurality of dopant batches to an ingot puller apparatus10 Sep 2026US 2026/0265945 A1GlobalWafers Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal with an offcut3 Sep 2026US 2026/0258579 A1Luxium Solutions, LLC
- Monocrystalline silicon drawing device and method13 Aug 2026US 2026/0234832 A1Jingao Solar Co., Ltd.
Most cited
By later US patents
- Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same95US 8,063,466 B2Sumco Corporation · 2011
- Continuous crystal growing furnace62US 4,036,595 ASiltec Corporation · 1977
- Continuous liquid silicon recharging process in Czochralski crucible pulling51US 5,242,531 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1993
- Aluminum oxide material for optical data storage51US 6,846,434 B2Landauer, Inc. · 2005
- Device and process for pulling high-purity semiconductor rods from a melt46US 4,330,362 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1982