Silicon single crystal growing method

A growing method of pulling up monocrystalline silicon from a dopant-added melt in which a dopant is added to a silicon melt and growing the monocrystalline silicon according to a Czochralski process, the growing method comprising:

• in a case that an abnormal growth occurs in the monocrystalline silicon, calculating a critical CV value, which is a product of a dopant concentration C and a pull-up speed V at a solidification rate at a point of time when the abnormal growth occurs, and creating a critical CV value profile;
• creating a target CV value profile by using a target CV value that is less than 90% and equal to or more than 50% of the critical CV value at each solidification rate in the critical CV value profile, and
• resetting at least one of a pull-up speed profile or a resistivity profile in a crystal axis direction to make a CV value, which is a product of the dopant concentration C and the pull-up speed V at each solidification rate of the monocrystalline silicon, satisfy the target CV value at each solidification rate in the target CV value profile.