C30B 15/04
Adding doping materials
Official title: adding doping materials, e.g. for n-p-junction
C30B15/04 (Adding doping materials) appears on 275 US grants and 357 published applications in this corpus.
Search patents in C30B- Granted patents
- 275
- Published applications
- 357
- Assignees
- 135
- Inventors
- 599
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 8 | 0 |
| 2001 | 6 | 3 |
| 2002 | 5 | 2 |
| 2003 | 2 | 9 |
| 2004 | 7 | 7 |
| 2005 | 5 | 5 |
| 2006 | 5 | 6 |
| 2007 | 3 | 13 |
| 2008 | 5 | 3 |
| 2009 | 3 | 16 |
| 2010 | 3 | 14 |
| 2011 | 8 | 18 |
| 2012 | 6 | 10 |
| 2013 | 11 | 9 |
| 2014 | 12 | 12 |
| 2015 | 8 | 16 |
| 2016 | 4 | 20 |
| 2017 | 9 | 21 |
| 2018 | 18 | 21 |
| 2019 | 21 | 12 |
| 2020 | 15 | 27 |
| 2021 | 19 | 10 |
| 2022 | 10 | 13 |
| 2023 | 10 | 20 |
| 2024 | 16 | 32 |
| 2025 | 16 | 19 |
| 2026 | 12 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Method of producing a crystal for a scintillation crystal detector and a crystal for a scintillation crystal detector8 Sep 2026US 12,729,455 B2Crytur, Spol.S R.O.
- Silicon single crystal growing method23 Jun 2026US 12,662,748 B2Sumco Corporation
- Methods for adding a plurality of dopant batches to an ingot puller apparatus23 Jun 2026US 12,662,749 B2GlobalWafers Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal with an offcut19 May 2026US 12,630,941 B2Luxium Solutions, LLC
- Crystal growth method, single crystal furnace vacuum system, and czochralski crystal growth device1 Oct 2026US 2026/0297798 A1Longi Green Energy Technology Co., Ltd.
- Methods for adding a plurality of dopant batches to an ingot puller apparatus10 Sep 2026US 2026/0265945 A1GlobalWafers Co., Ltd.
- Apparatus and method for growth of gallium oxide crystal with an offcut3 Sep 2026US 2026/0258579 A1Luxium Solutions, LLC
- Scintillator crystal having cerium, calcium, and magnesium doped lyso and associated methods6 Aug 2026US 2026/0226348 A1Crystal Photonics, Incorporated
- Scintillator crystal having cerium, calcium, and magnesium doped lgso and associated methods6 Aug 2026US 2026/0226349 A1Crystal Photonics, Incorporated
Most cited
By later US patents
- Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same95US 8,063,466 B2Sumco Corporation · 2011
- Continuous liquid silicon recharging process in Czochralski crucible pulling51US 5,242,531 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1993
- Aluminum oxide material for optical data storage51US 6,846,434 B2Landauer, Inc. · 2005
- Continuous liquid silicon recharging process in czochralski crucible pulling35US 5,324,488 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoff mbH · 1994
- System for continuous growing of monocrystalline silicon22US 8,317,919 B2Solaicx, Inc. · 2012