Methods for adding a plurality of dopant batches to an ingot puller apparatus

A method for producing a single crystal silicon ingot from a silicon melt held within a crucible, the method comprising:

• adding solid-state silicon to the crucible, the crucible being disposed within an ingot puller inner chamber;
• heating the solid-state silicon to cause the silicon melt to form in the crucible;
• pulling the single crystal silicon ingot from the silicon melt;
• rotating a first dopant receptacle to release a first batch of dopant from the first dopant receptacle and cause the first batch of dopant to enter the silicon melt while pulling the single crystal silicon ingot from the silicon melt, the first dopant receptacle being disposed within a dopant cup, the dopant cup comprising a sidewall, a first dopant cup opening formed in the sidewall, and a second dopant cup opening, the dopant cup being rotated to cause the first batch of dopant to fall through a first dopant receptacle outlet and from the first dopant receptacle, the first dopant cup opening being aligned with the first dopant receptacle outlet;
• and
• rotating a second dopant receptacle to release a second batch of dopant from the second dopant receptacle and cause the second batch of dopant to enter the silicon melt while pulling the single crystal silicon ingot from the silicon melt and after the first batch of dopant is released from the first dopant receptacle, the second dopant receptacle being disposed within the dopant cup, the dopant cup being rotated to cause the second batch of dopant to fall through a second dopant receptacle outlet and from the second dopant receptacle, the second dopant cup opening being aligned with the second dopant receptacle outlet.

A method for producing a single crystal silicon ingot from a silicon melt held within a crucible, the method comprising:

• adding solid-state silicon to the crucible, the crucible being disposed within an ingot puller inner chamber;
• heating the solid-state silicon to cause the silicon melt to form in the crucible;
• pulling the single crystal silicon ingot from the silicon melt;
• rotating a dopant cup, a first dopant receptacle and a second dopant receptacle being disposed within the dopant cup, the dopant cup comprising:
• a sidewall;
• a first dopant cup opening formed in the sidewall;
• and
• a second dopant cup opening;
• and
• wherein rotating the dopant cup causes:
• the first dopant receptacle and the second dopant receptacle to rotate simultaneously in a first step to release a first batch of solid-phase dopant from the first dopant receptacle and through a first dopant receptacle outlet to cause the first batch of solid-phase dopant to enter the silicon melt while pulling the single crystal silicon ingot from the silicon melt, the first batch of solid-phase dopant being released only from the first dopant receptacle, the first dopant cup opening being aligned with the first dopant receptacle outlet;
• and
• the first dopant receptacle and the second dopant receptacle to rotate simultaneously in a second step to release a second batch of solid-phase dopant from the second dopant receptacle and through a second dopant receptacle outlet to cause the second batch of solid-phase dopant to enter the silicon melt while pulling the single crystal silicon ingot from the silicon melt, the second batch of solid-phase dopant only being released from the second dopant receptacle, the second dopant cup opening being aligned with the second dopant receptacle outlet.