Crystal growth method, single crystal furnace vacuum system, and czochralski crystal growth device
AssigneeLongi Green Energy Technology Co., Ltd.
InventorsZhiyan XIE, Xiaokang MA, Hao DENG, Qiao LI, Chao DU, Wei HAN
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Abstract
The present disclosure discloses a crystal growth method, a single crystal furnace vacuum system, and a Czochralski crystal growth device. An example method includes: performing leakage detection on a single crystal furnace at a first furnace pressure; adding a dopant into the single crystal furnace at a second furnace pressure, where the second furnace pressure is greater than the first furnace pressure; and performing a crystal pulling process after the dopant is added.
Claims18
A crystal growth method, comprising:
- performing leakage detection on a single crystal furnace at a first furnace pressure;
- adding a dopant into the single crystal furnace at a second furnace pressure, wherein the second furnace pressure is greater than the first furnace pressure;
- and
- performing a crystal pulling process by using the single crystal furnace after the dopant is added.
2-4. (canceled)
6-13. (canceled)
A crystal growth method, comprising:
- adjusting a temperature in a single crystal furnace at a fifth furnace pressure after a silicon material is melted in the single crystal furnace, wherein the fifth furnace pressure is less than or equal to 3 Torr;
- performing seed dipping, shouldering, and shoulder formation at a sixth furnace pressure after adjusting the temperature, wherein the sixth furnace pressure is less than or equal to the fifth furnace pressure;
- and
- performing constant-diameter growth after shoulder formation at the sixth furnace pressure;
- and
- performing Czochralski crystal growth by lowering a pressure of the single crystal furnace from the sixth furnace pressure based on a length of monocrystalline silicon grown during the constant-diameter growth.
Crystalline silicon, wherein the crystalline silicon is prepared using a single crystal furnace by:
- performing leakage detection on the single crystal furnace at a first furnace pressure;
- adding a dopant into the single crystal furnace at a second furnace pressure, wherein the second furnace pressure is greater than the first furnace pressure;
- and
- performing a crystal pulling process after the dopant is added.
27-41. (canceled)
Dependencies are inferred from the claim text.