Continuous crystal growing furnace

In an apparatus for growing a semiconductor crystal from a melt of a semiconductor material maintained in a first crucible, said first crucible being enclosed in a first chamber, the improvement comprising a second crucible having means for melting solid material to provide a melt in said second crucible and means for introducing said molten material from said second crucible to said first crucible, said means including a tube extending into the molten material of the second crucible whereby liquid is withdrawn from the second crucible from a point between the bottom of the crucible and the top surface of the melt, said second crucible being mounted in an enclosed second chamber separate from said first chamber, said second chamber having a top opening leading to said second chamber, said top opening having valve means to selectively close or open said top opening, and a tight fitting cannister adapted to be inserted into said top opening, said cannister being elongated and having a valve means at the bottom thereof and operating means connected to said bottom valve means and extending out through the top of the cannister whereby the contents of the cannister can be selectively introduced by actuating said operating means.--